2024-03-29T06:51:33Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/1605892018-02-14T01:55:54Zcom_10261_10252com_10261_3col_10261_10255
Figueroa, Adriana I.
Bonell, Fréderic
Valenzuela, Sergio O.
2018-02-13T13:28:32Z
2018-02-13T13:28:32Z
2017
1st Workshop Spain-Taiwan: "2D Materials and Interfaces for Spintronics" (2017)
http://hdl.handle.net/10261/160589
Topological insulators (TIs) are novel class of materials with promising electronic properties that could
allow for dissipationless carrier transport in future electronic and spintronic devices through their spinmomentum locked surface states. Combination of TIs with magnetic materials has become one the
main strategies for their practical use due to the emergence of novel magneto-electric effects. Recent
reports on TI thin films in direct contact with magnetic insulators (MI) have revealed interesting
phenomena at the TI/MI interface. However, the mechanisms for magnetic proximity and
electronic transport at these interfaces are not completely understood and therefore not well
controlled. Investigation of these effects would yield to the observation of exotic magneto-electric
phenomena, such as the quantum anomalous Hall effect, as well as incorporation of TIs into future
devices. Thus, we have grown Bi2Te3/EuS heterostructures using molecular beam epitaxy with the aim
of studying magnetic proximity effects. In this work, we will show results of structural, magnetic and
magneto-electrical properties of these heterostructures using a variety of characterization techniques.
eng
closedAccess
Magnetic proximity effects in topological insulator/magnetic insulator heterostructures
póster de congreso