2024-03-28T21:58:31Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/1332302021-05-11T14:21:32Zcom_10261_46com_10261_3col_10261_299
Queraltó, Albert
Pérez del Pino, Ángel
de la Mata, M
Arbiol, Jordi
Obradors, Xavier
Puig Molina, Teresa
2016-06-09T10:48:03Z
2016-06-09T10:48:03Z
2015-04
Crystal Growth and Design 15(4): 1957- 1967 (2015)
1528-7483
http://hdl.handle.net/10261/133230
10.1021/acs.cgd.5b00115
1528-7505
http://dx.doi.org/10.13039/501100002809
http://dx.doi.org/10.13039/501100003329
http://dx.doi.org/10.13039/501100003339
© 2015 American Chemical Society. The epitaxial growth of Ce0.9Zr0.1O2-y (CZO) thin-films on yttria-stabilized zirconia (YSZ) (001) single crystal and YSZ (001)/stainless steel (YSZ/SS) technological substrates is investigated by pulsed laser irradiation of solution-derived cerium-zirconium precursor layers using a UV Nd:YAG laser source at atmospheric conditions. The influence of laser processing parameters on the morphological and structural properties of the obtained films is studied by atomic force and transmission electron microscopies, as well as X-ray diffractometry. The analyses performed demonstrate that laser treatments enable the epitaxial growth of tens of nanometers thick CZO films with a crystallization kinetic process several orders of magnitude faster than that of conventional thermal annealing. Fully epitaxial films are attained using stainless steel (SS) flexible tapes as a substrate. Even though photochemical mechanisms are not fully discarded, it is concluded that photothermal processes are the main contribution responsible for the fast epitaxial crystallization.
eng
openAccess
Chemical solution deposition
Epitaxial crystallization
Cerium oxide
Laser irradiation
Ultrafast crystallization of Ce0.9Zr0.1O2-y epitaxial films on flexible technical substrates by pulsed laser irradiation of chemical solution derived precursor layers
artículo