2024-03-29T07:20:47Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/1024072022-03-17T10:18:55Zcom_10261_115com_10261_3col_10261_368
DIGITAL.CSIC
author
Nechaev, I. A.
author
Hatch, R. C.
author
Bianchi, Marco
author
Guan, D.
author
Friedrich, C.
author
Aguilera, I.
author
Mi, J. L.
author
Iversen, B. B.
author
Blügel, S.
author
Hofmann, Ph.
author
Chulkov, Eugene V.
funder
Lundbeck Foundation
funder
Villum Fonden
funder
Universidad del País Vasco
funder
Eusko Jaurlaritza
funder
Ministerio de Ciencia e Innovación (España)
2014-09-24T10:08:11Z
2014-09-24T10:08:11Z
2013
Physical Review B 87: 121111(R) (2013)
http://hdl.handle.net/10261/102407
10.1103/PhysRevB.87.121111
http://dx.doi.org/10.13039/501100003554http://dx.doi.org/10.13039/100008398http://dx.doi.org/10.13039/501100004837http://dx.doi.org/10.13039/501100003086
Using angle-resolved photoelectron spectroscopy and ab initio GW calculations, we unambiguously show that the widely investigated three-dimensional topological insulator Bi2Se3 has a direct band gap at the Γ point. Experimentally, this is shown by a three-dimensional band mapping in large fractions of the Brillouin zone. Theoretically, we demonstrate that the valence-band maximum is located at the Γ point only if many-body effects are included in the calculation. Otherwise, it is found in a high-symmetry mirror plane away from the zone center. © 2013 American Physical Society.
eng
openAccess
Evidence for a direct band gap in the topological insulator Bi 2Se3 from theory and experiment
artículo
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URL
https://digital.csic.es/bitstream/10261/102407/1/direct%20band%20gap.pdf
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direct band gap.pdf.txt
URL
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File
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direct band gap.pdf.txt