2024-03-29T15:59:18Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/992182016-02-18T03:01:09Zcom_10261_46com_10261_3com_10261_98com_10261_10252col_10261_299col_10261_351col_10261_10253
00925njm 22002777a 4500
dc
Sandiumenge, Felip
author
Santiso, José
author
Balcells, Lluis
author
Konstantinović, Z.
author
Roqueta, Jaume
author
Pomar, Alberto
author
Espinós, J.P.
author
Martínez Perea, Benjamín
author
2013
Strain engineering of functional properties in epitaxial thin films of strongly correlated oxides exhibiting octahedral-framework structures is hindered by the lack of adequate misfit relaxation models. Here we present unreported experimental evidence of a four-stage hierarchical development of octahedral-framework perturbations resulting from a progressive imbalance between electronic, elastic, and octahedral tilting energies in La 0.7Sr0.3MnO3 epitaxial thin films grown on SrTiO3 substrates. Electronic softening of the Mn-O bonds near the substrate leads to the formation of an interfacial layer clamped to the substrate with strongly degraded magnetotransport properties, i.e., the so-called dead layer, while rigid octahedral tilts become relevant at advanced growth stages without significant effects on charge transport and magnetic ordering. © 2013 American Physical Society.
Physical Review Letters 110: 107206 (2013)
http://hdl.handle.net/10261/99218
10.1103/PhysRevLett.110.107206
http://dx.doi.org/10.13039/501100004837
http://dx.doi.org/10.13039/501100003339
Competing misfit relaxation mechanisms in epitaxial correlated oxides