2024-03-30T01:03:04Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/200872018-07-10T11:55:05Zcom_10261_82com_10261_8col_10261_335
00925njm 22002777a 4500
dc
Cuscó, Ramón
author
Pastor, D.
author
Hernández, S.
author
Artús, Lluís
author
Martínez, O.
author
Jiménez, Juan
author
Martin, R. W.
author
O'Donnell, K. P.
author
Watson, I. M.
author
2008-10
We present a Raman scattering and cathodoluminescence study of a set of InxAl1−xN/GaN epilayers with InN fractions around the lattice-matched composition. We observed the A1(LO) and InN-like E2 modes of the alloy, whose frequencies are in good agreement with theoretical predictions, but we were unable to detect the AlN-like E2 mode. The InN-like E2 mode did not exhibit noticeable frequency shifts in the studied samples. This is explained by the presence of residual strain in the pseudomorphic InxAl1−xN films. A luminescence peak that shifts to lower energies with an increasing InN fraction was observed at energies above the band edge of the GaN substrate. The cathodoluminescence peak energy is lower than expected, indicating a large band-gap bowing in these alloy layers.
Semiconductor Science and Technology
0268-1242
http://hdl.handle.net/10261/20087
10.1088/0268-1242/23/10/105002
Raman scattering and cathodoluminescence characterization of near lattice-matched InxAl1−xN epilayers