2024-03-28T20:10:02Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/194672022-12-14T11:49:50Zcom_10261_31com_10261_3col_10261_284
00925njm 22002777a 4500
dc
Stankiewicz, Jolanta
author
Jiménez-Villacorta, Félix
author
Prieto, Carlos
author
2006-01
We report results of electrical resistivity, Hall effect, and anisotropic magnetoresistance (AMR) measurements performed on thin films (~80 nm) of naturally oxidized iron in the 5 to 300 K temperature range, and in magnetic fields up to 5 T. The films were grown at low temperatures. We find that the resistivity, coercive field, as well as the magnetoresistance of the films are affected by growth conditions, particularly by the substrate temperature which controls the size and shape of crystalline grains. We used AMR as a probe for magnetization reversal studies in our films. We find that the coercive fields vary as as in systems of weakly interacting ensembles of magnetic nanoparticles even though dipole-dipole interactions may well play a significant role.
Physical Review 73(1): 014429 (2006)
1098-0121
http://hdl.handle.net/10261/19467
10.1103/PhysRevB.73.014429
http://dx.doi.org/10.13039/501100006280
Ferromagnetic materials
Magnetic thin films
Hall effect
Magnetoresistance
Nanoparticles
Magnetic particles
Coercive force
Iron compounds
Magnetotransport properties of oxidized iron thin films