2024-03-28T11:54:41Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/1340692020-05-25T15:05:46Zcom_10261_115com_10261_3col_10261_368
00925njm 22002777a 4500
dc
Engelund, Mads
author
Godlewski, Szymon
author
Kolmer, Marek
author
Zuzak, Rafał
author
Such, Bartosz
author
Frederiksen, Thomas
author
Szymonski, Marek
author
Sánchez-Portal, Daniel
author
2016
Dangling bond (DB) arrays on Si(001):H and Ge(001):H surfaces can be patterned with atomic precision and they exhibit complex and rich physics making them interesting from both technological and fundamental perspectives. But their complex behavior often makes scanning tunneling microscopy (STM) images difficult to interpret and simulate. Recently it was shown that low-temperature imaging of unoccupied states of an unpassivated dimer on Ge(001):H results in a symmetric butterfly-like STM pattern, despite that the equilibrium dimer configuration is expected to be a bistable, buckled geometry. Here, based on a thorough characterization of the low-bias switching events, we propose a new imaging model featuring a dynamical two-state rate equation. This model allows us to reproduce the features of the observed symmetric empty-state images which strongly corroborates the idea that the patterns arise due to fast switching events and provides insight into the relation between the tunneling current and switching rates. Our new imaging model is general and can be applied to other systems that exhibit rapid fluctuations during STM experiments.
Physical Chemistry Chemical Physics 18(28): 19309-19317 (2016)
1463-9076
http://hdl.handle.net/10261/134069
10.1039/C6CP04031D
1463-9084
http://dx.doi.org/10.13039/501100000780
http://dx.doi.org/10.13039/501100003329
http://dx.doi.org/10.13039/501100003086
The butterfly - a well-defined constant-current topography pattern on Si(001):H and Ge(001):H resulting from current-induced defect fluctuations