2024-03-28T18:12:05Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/1082872016-07-28T10:20:55Zcom_10261_89com_10261_3com_10261_36com_10261_4col_10261_342col_10261_289
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Kyoung Ryu, Yu
author
Postigo, Pablo Aitor
author
García-Pérez, Fernando
author
García García, Ricardo
author
2014
Silicon nanowires are key elements to fabricate very sensitive mechanical and electronic devices. We provide a method to fabricate sub-12 nm silicon nanowires in thickness by combining oxidation scanning probe lithography and anisotropic dry etching. Extremely thin oxide masks (0.3-1.1 nm) are transferred into nanowires of 2-12 nm in thickness. The width ratio between the mask and the silicon nanowire is close to one which implies that the nanowire width is controlled by the feature size of the nanolithography. This method enables the fabrication of very small single silicon nanowires with cross-sections below 100 nm2. Those values are the smallest obtained with a top-down lithography method. © 2014 AIP Publishing LLC.
Applied Physics Letters 104: 223112 (2014)
http://hdl.handle.net/10261/108287
10.1063/1.4881977
http://dx.doi.org/10.13039/501100000780
Fabrication of sub-12 nm thick silicon nanowires by processing scanning probe lithography masks