2024-03-29T12:50:10Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/1034312018-11-15T12:37:48Zcom_10261_84com_10261_5col_10261_337
00925njm 22002777a 4500
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Rozada Rodríguez, Rubén
author
Solís Fernández, Pablo
author
Paredes Nachón, Juan Ignacio
author
Martínez Alonso, Amelia
author
Ago, H.
author
Díez Tascón, Juan Manuel
author
2014
The introduction of atomic-scale defects in a controllable manner and the understanding of their effect on the characteristics of graphene are essential to develop many applications based on this two-dimensional material. Here, we investigate the use of microwave-induced oxygen plasma towards the generation of small-sized atomic vacancies (holes) in graphene grown by chemical vapor deposition. Scanning tunneling microscopy revealed that tunable vacancy densities in the 103–105 μm−2 range could be attained with proper plasma parameters. Transport measurements and Raman spectroscopy revealed p-type doping and a decrease in charge carrier mobility for the vacancy-decorated samples. This plasma-modified graphene could find use in, e.g., gas or liquid separation, or molecular sensing.
Carbon 79: 664-669 (2014)
0008-6223
http://hdl.handle.net/10261/103431
10.1016/j.carbon.2014.08.015
Controlled generation of atomic vacancies in chemical vapor deposited graphene by microwave oxygen plasma