2024-03-28T19:12:41Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/1021622019-02-21T09:41:53Zcom_10261_115com_10261_3col_10261_368
00925njm 22002777a 4500
dc
Vergniory, M.
author
Menshchikova, Tatiana V.
author
Eremeev, S. V.
author
Chulkov, Eugene V.
author
2013
Using density functional theory with the spin–orbit coupling included we analyze the bulk and surface electronic structure of SnBi4Te7 ternary compound. It was revealed that this material is a strong topological insulator with a bulk band gap of about 100 meV and a robust surface state around the Γ¯ point. We find that the topological nature of the surface state remains robust with different terminations of the surface.
Applied Surface Science 267: 146-149 (2013)
http://hdl.handle.net/10261/102162
10.1016/j.apsusc.2012.08.073
http://dx.doi.org/10.13039/501100003086
Surface states
Topological insulators
Electronic structure
Bulk and surface electronic structure of SnBi4Te7 topological insulator