2024-03-28T21:56:27Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/116942020-07-23T11:16:22Zcom_10261_36com_10261_4col_10261_289
2009-03-17T12:30:37Z
urn:hdl:10261/11694
Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers
Martínez Pastor, Juan Pascual
Fuster, David
Abellán Rubio, María de los Ángeles
Anguita, José Virgilio
Sochinskii, N. V.
Cadmium compounds
Etching
II-VI semiconductors
Impurities
Ion beam assisted deposition
MOCVD
Photoluminescence
Sapphire
Semiconductor epitaxial layers
Spectral line intensity
Vapour phase epitaxial growth
http://link.aip.org/link/?JAPIAU/103/056108/1
We demonstrated the effect of reactive ion beam etching (RIBE) process on the PL properties of CdTe/sapphire metal organic vapor phase epitaxy layers. At optimum conditions, the RIBE attack does not make significant morphological changes but it results in an increase of the concentration of acceptor impurities. This was revealed by an increase of the overall photoluminescence (PL) intensity and, simultaneously, a decrease of the PL decay time, more important on the low energy side of PL spectrum due to the recombination of carriers in acceptor pairs.
2009-03-17T12:30:37Z
2009-03-17T12:30:37Z
2008-03-10
artículo
Journal of Applied Physics 103, 056108 (2008)
0021-8979
http://hdl.handle.net/10261/11694
10.1063/1.2874480
eng
http://dx.doi.org/10.1063/1.2874480
openAccess
American Institute of Physics