Foto:
cusco-ramon.jpg picture
 
Firma en Digital.CSIC (*):
Cuscó, Ramón
 
Centro o Instituto:
CSIC - Instituto de Ciencias de la Tierra Jaume Almera (ICTJA)
 
Departamento:
Structure and Dynamics of the Earth and Crystallography. Research Group: Crystallography and Optical Properties
 
Categoría Profesional:
Scientific staff. Doctor
 
Especialización:
This line of research is focused on the study of the optical properties of semiconductor materials. Over the past few years we have carried out Raman scattering studies on a variety of III-V compound systems such as GaN, InN, InGaN, InAs/GaAs, InGaAs, InP, AlGaSb, InAsSb, GaSb, GaAsN, as well as on ZnO, a II-VI wide band gap material which is intensively being investigated because of its potential applications in transparent electronics and in blue and UV light emitters
 
 
Otros identificadores (con url):
 
 
Email:
rcusco@ictja.csic.es
 

Resultados 1-20 de 45.

DerechosPreviewFecha Public.TítuloAutor(es)Tipo
1openAccessPhysRevB92075206.pdf.jpg2015Anharmonic phonon decay in cubic GaNCuscó, Ramón  ; Domènech-Amador, Núria ; Novikov, S. V.; Foxon, C. T.; Artús, Lluís  Artículo
2closedAccessaccesoRestringido.pdf.jpgjul-2017Band gap of corundumlike alpha-Ga2O3 determined by absorption and ellipsometrySegura, A.; Artús, Lluís  ; Cuscó, Ramón  ; Goldhahn, R.; Feneberg, M.Artículo
3openAccessCusco 2012 ApplPhysLett_101_062103.pdf.jpg2012Brillouin scattering determination of the surface acoustic wave velocity in In xGa 1-xN: A probe into the elastic constantsJiménez Riobóo, R. J. ; Cuscó, Ramón  ; Oliva, Ramón; Domènech-Amador, Núria ; Prieto, C. ; Ibáñez Insa, Jordi  ; Boney, C.; Bensaoula, A.; Artús, Lluís  Artículo
4closedAccessaccesoRestringido.pdf.jpg2016Cathodoluminescence study of Mg activation in non-polar and semi-polar faces of undoped/Mg-doped GaN core-shell nanorodsHortelano, V.; Martínez, O.; Cuscó, Ramón  ; Artús, Lluís  ; Jiménez, JuanArtículo
5openAccessGetPDFServlet.pdf.jpg1-dic-2000Comparison of Raman-scattering and Shubnikov–de Haas measurements to determine charge density in doped semiconductorsCuscó, Ramón  ; Artús, Lluís  ; Ibáñez Insa, Jordi  ; Blanco, N.; González-Díaz, G.; Rahman, M.; Long, A. R.Artículo
6closedAccessene-2009Dilute (In,Ga)(As,N) thin films grown by molecular beam epitaxy on (100) and non-(100) GaAs substrates: a Raman-scattering studyIbáñez Insa, Jordi  ; Alarcón-Lladó, Esther ; Cuscó, Ramón  ; Artús, Lluís  ; Henini, Mohamed; Hopkinson, MarkArtículo
7closedAccessaccesoRestringido.pdf.jpg2012Double resonance Raman effects in InN nanowiresDomènech-Amador, Núria ; Cuscó, Ramón  ; Calarco, R.; Yamaguchi, T.; Nanishi, Y.; Artús, Lluís  Artículo
8closedAccessaccesoRestringido.pdf.jpg2014Electron density gradients in ammonothermally grown Si-doped GaNCuscó, Ramón  ; Domènech-Amador, Núria ; Jiménez, Juan; Artús, Lluís  Artículo
9openAccessJApplPhys_103_103528.pdf.jpgago-2008Electron effective mass and mobility in heavily doped n-GaAsN probed by Raman scatteringIbáñez Insa, Jordi  ; Cuscó, Ramón  ; Alarcón-Lladó, Esther ; Artús, Lluís  ; Patanè, A.; Fowler, D.; Eaves, L.; Uesugi, K.; Suemune, I.Artículo
10openAccessJApplPhys_104_033544.pdf.jpgjul-2008Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxyIbáñez Insa, Jordi  ; Hernández, S.; Alarcón-Lladó, Esther ; Cuscó, Ramón  ; Artús, Lluís  ; Novikov, S. V.; Foxon, C. T.Artículo
11openAccessCusco_physical_review_b_2013_88_115202.pdf.jpg2013High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopyIbáñez Insa, Jordi  ; Oliva, Ramón; Manjón, F. J.; Segura, A.; Yamaguchi, T.; Nanishi, Y.; Cuscó, Ramón  ; Artús, Lluís  Artículo
12openAccessOliva 2014 Applied Physics Letters 104 142101.pdf.jpgabr-2014High-pressure Raman scattering in InGaN heteroepitaxial layers: Effect of the substrate on the phonon pressure coefficientsOliva, Ramón; Ibáñez Insa, Jordi  ; Cuscó, Ramón  ; Dadgar, A.; Krost, A.; Gandhi, J.; Bensaoula, A.; Artús, Lluís  Artículo
13openAccessOliva 2013 Journal of Applied Physics 113.pdf.jpg2013High-pressure Raman scattering of CdO thin films grown by metal-organic vapor phase epitaxyOliva, Ramón; Ibáñez Insa, Jordi  ; Artús, Lluís  ; Cuscó, Ramón  ; Zúñiga-Pérez, J.; Muñoz-Sanjosé, V.Artículo
14closedAccessaccesoRestringido.pdf.jpg2016Identifying and mapping the polytypes and orientation relationships in ZnO/CdSe core-shell nanowire arraysConsonni, Vincent; Rapenne, Laetitia; Renou, G.; Roussel, H.; Gérard, L.; Cuscó, Ramón  ; Artús, Lluís  ; André, R.; Rauch, E.F.Artículo
15openAccessArtus_APPLIED_PHYSICS_LETTERS_112_051905.pdf.jpgfeb-2018In- and out-of-plane longitudinal acoustic-wave velocities and elastic moduli in h-BN from Brillouin scattering measurementsJiménez Riobóo, R. J. ; Artús, Lluís  ; Cuscó, Ramón  ; Taniguchi, Takashi; Cassabois, Guillaume; Gil, BernardArtículo
16embargoedAccessCusco_Nature_Materials_17_152_postprint.pdf.jpgdic-2017Isotope engineering of van derWaals interactions in hexagonal boron nitrideVuong, T. Q P; Cuscó, Ramón  ; Artús, Lluís  ; Gil, BernardArtículo
17openAccessCusco_PHYSICAL_REVIEW_97_155435.pdf.jpgabr-2018Isotopic effects on phonon anharmonicity in layered van der Waals crystals: Isotopically pure hexagonal boron nitrideCuscó, Ramón  ; Artús, Lluís  ; Edgar, J. H.; Liu, Song; Cassabois, Guillaume; Gil, BernardArtículo
18openAccess2009 Artus JApplPhys_106_053510.pdf.jpgsep-2009Laser thermal annealing effects on single crystal gallium phosphidePastor, D.; Olea, Javier; Toledano-Luque, M.; Mártil, Ignacio; González-Díaz, G.; Ibáñez Insa, Jordi  ; Cuscó, Ramón  ; Artús, Lluís  Artículo
19openAccessCusco Journal of Applied Physics 117 185706.pdf.jpg2015Lattice dynamics of a mist-chemical vapor deposition-grown corundum-like Ga<inf>2</inf>O<inf>3</inf> single crystalCuscó, Ramón  ; Domènech-Amador, Núria ; Hatakeyama, T.; Yamaguchi, T.; Honda, T.; Artús, Lluís  Artículo
20closedAccessene-2009LO phonon–plasmon coupled modes and carrier mobilities in heavily Se-doped Ga(As, N) thin filmsIbáñez Insa, Jordi  ; Alarcón-Lladó, Esther ; Cuscó, Ramón  ; Artús, Lluís  ; Fowler, D.; Patanè, A.; Uesugi, K.; Suemune, I.Artículo