English   español  

Navegación por Autor Zabala, Miguel

Ir a: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
O introducir las primeras letras:  
Mostrando resultados 1 a 20 de 21  Siguiente >
DerechosPreviewFecha Public.TítuloAutor(es)Tipo
openAccessManuscript_#SSE-D-11-00531_revised_version_with_all_changes_accepted_vfinal.pdf.jpg20132 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al<inf>2</inf>O <inf>3</inf>, HfO<inf>2</inf> and nanolaminated dielectricsRafí, J. M. CSIC ORCID ; Campabadal, Francesca CSIC ORCID ; Ohyama, H.; Takakura, K.; Tsunoda, I.; Zabala, Miguel; Beldarrain, O.; González, M. B.; García, H.; Castán, H.; Gómez, A.; Dueñas, S.artículo
openAccessMR-D-13-00242R1-2_pagines_rellevants.pdf.jpg20132 MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al<inf>2</inf>O<inf>3</inf> dielectrics of different thicknessRafí, J. M. CSIC ORCID ; González, M. B.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Beldarrain, O.; Zabala, Miguel; Campabadal, Francesca CSIC ORCID artículo
closedAccessaccesoRestringido.pdf.jpg9-jun-2014Analysis of the temperature dependence of the switching variability in Ni/HfO2-based RRAM devicesGonzález, M. B.; Rafí, J. M. CSIC ORCID ; Beldarrain, O.; Zabala, Miguel; Acero Leal, María Cruz CSIC ORCID ; Campabadal, Francesca CSIC ORCID comunicación de congreso
openAccessAssessment of resistive switching characteristics on different.pdf.jpg11-jun-2018Assessment of resistive switching characteristics on different HfO2/Al2O3 dielectric stacksMaestro, Marcos; Poblador, Samuel CSIC ORCID ; Zabala, Miguel; Acero Leal, María Cruz CSIC ORCID ; González, M. B.; Campabadal, Francesca CSIC ORCID póster de congreso
openAccessBlistering of ALD.pdf.jpg28-sep-2015Blistering of ALD Al2O3 films in Al-Al2O3-Si structuresCampabadal, Francesca CSIC ORCID ; Acero Leal, María Cruz CSIC ORCID ; Beldarrain, O.; Duch, M.; Zabala, Miguel; González, M. B.póster de congreso
openAccessCapacitance_Fredj_PV_Art2020.pdf.jpg10-ene-2021Capacitance Electrochemical pH Sensor Based on Different Hafnium Dioxide (HfO2) ThicknessesFredj, Zina; Baraket, Abdoullatif; Ben Ali, Mounir; Zine, Nadia; Zabala, Miguel; Bausells, Joan CSIC ORCID ; Elaissari, Abdelhamid; Benson, Nsikak U.; Jaffrezic-Renault, Nicole; Errachid, Abdelhamidartículo
openAccessComparison between Al2O3 thin films grown by ALD.pdf.jpg8-feb-2011Comparison between Al2O3 thin films grown by ALD using H2O or O3 as oxidant sourceCampabadal, Francesca CSIC ORCID ; Beldarrain, O.; Zabala, Miguel; Acero Leal, María Cruz CSIC ORCID ; Rafí, J. M. CSIC ORCID comunicación de congreso
openAccessManuscript_#JES-10-0845R1_3rd_revision_vfinal.pdf.jpg2011Deposition temperature and thermal annealing effects on the electrical characteristics of atomic layer deposited Al<inf>2</inf>O<inf>3</inf> films on siliconRafí, J. M. CSIC ORCID ; Zabala, Miguel; Beldarrain, O.; Campabadal, Francesca CSIC ORCID artículo
openAccess613078.pdf.jpg2016Development of a novel capacitance electrochemical biosensor based on silicon nitride for ochratoxin A detectionBougrinia, Madiha; Baraket, Abdoullatif; Jamshaid, Talha; El Aissari, Abdelhamid; Bausells, Joan CSIC ORCID; Zabala, Miguel; El Bari, Nezha; Bouchikhi, Benachir; Jaffrezic-Renault, Nicole; Errachid, Abdelhamid; Zine, Nadiaartículo
openAccessEffect of the blistering of ALD Al2O3 films on the silicon.pdf.jpg11-feb-2015Effect of the blistering of ALD Al2O3 films on the silicon surface in Al-Al2O3-Si structuresAcero Leal, María Cruz CSIC ORCID ; Beldarrain, O.; Duch, M.; Zabala, Miguel; González, M. B.; Campabadal, Francesca CSIC ORCID póster de congreso
openAccessElectrical characterization and resistive switching behavior.pdf.jpg14-nov-2018Electrical characterization and resistive switching behavior of HfO2/Al2O3 multilayer stacksMaestro, Marcos; Poblador, Samuel CSIC ORCID ; Zabala, Miguel; Acero Leal, María Cruz CSIC ORCID ; González, M. B.; Campabadal, Francesca CSIC ORCID póster de congreso
openAccess1.4768167.pdf.jpg2013Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealingGarcía, H.; Castán, H.; Dueñas, S.; Bailón, L.; Campabadal, Francesca CSIC ORCID ; Beldarrain, O.; Zabala, Miguel; González, M. B.; Rafí, J. M. CSIC ORCID artículo
openAccessElectroanalysis_28_2016_2892.pdf.jpg27-jun-2016Electrochemical capacitive K+ EMIS chemical sensor based on the dibromoaza[7]helicene as an ionophore for potassium ions detectionTounsi, Moncef; Zabala, Miguel; Bausells, Joan CSIC ORCID ; Errachid, Abdelhamidartículo
openAccessExploring the Multilevel Capabiblity of TIN.pdf.jpg27-jun-2016Exploring the Multilevel Capabiblity of TIN/Ti/HfO2/W RRAM Devices by Pulse ProgrammingGonzález, M. B.; Acero Leal, María Cruz CSIC ORCID ; Calvo Angos, José; Zabala, Miguel; Campabadal, Francesca CSIC ORCID comunicación de congreso
openAccessManuscript_#SSE-D-13-00195_revised_vfinal.pdf.jpg2013Impact of electrical stress on the electrical characteristics of 2 MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al<inf>2</inf>O<inf>3</inf>, HfO<inf>2</inf> and nanolaminated dielectricsRafí, J. M. CSIC ORCID ; González, M. B.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Beldarrain, O.; Zabala, Miguel; Campabadal, Francesca CSIC ORCID artículo
openAccessJMRafi_et_al_ICDS-25_Mon-1.64po_Manuscript_213462_revised_final_no_changes.pdf.jpg2009Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formationRafí, J. M. CSIC ORCID ; Vanhellemont, J.; Simoen, E.; Chen, J.; Zabala, Miguel; Campabadal, Francesca CSIC ORCID artículo
openAccess3-abr-2017Investigation of the multilevel capability of TiN/Ti/HfO2/W RRAM devices by pulse programmingGonzález, M. B.; Poblador, Samuel CSIC ORCID ; Mallol, M. M.; Calvo, J.; Zabala, Miguel; Acero Leal, María Cruz CSIC ORCID ; Campabadal, Francesca CSIC ORCID comunicación de congreso
openAccess11-feb-2015Investigation of the resistive switching behavior in Ni/HfO2-based RRAM devicesGonzález, M. B.; Acero Leal, María Cruz CSIC ORCID ; Beldarrain, O.; Zabala, Miguel; Campabadal, Francesca CSIC ORCID comunicación de congreso
openAccessoptics-04-00017-v2.pdf.jpgmar-2023Nonperturbative generation of harmonics by nanometer-scale localized electronic states on the surface of bulk materials and nano-filmsSeres, Jozsef; Seres, Enikoe; Céspedes, Eva CSIC ORCID; Martinez de Olcoz, Leyre; Zabala, Miguel; Schumm, Thorstenartículo
closedAccessaccesoRestringido.pdf.jpg2009Patterning of ALD HfO2 layers on siliconAndreu, Robert; Sanchez, Javier; Sanchez, Ana; Zabala, Miguel; Acero Leal, María Cruz CSIC ORCID ; Rafí, J. M. CSIC ORCID ; Campabadal, Francesca CSIC ORCID artículo