Derechos | Preview | Fecha Public. | Título | Autor(es) | Tipo |
closedAccess | | 2008 | Characterization of the resonant third-order nonlinear susceptibility of Si-doped GaN-AlN quantum wells and quantum dots at 1.5 μm | Valdueza-Felip, S.; Naranjo, Fernando B.; González-Herráez, Miguel CSIC ORCID; Fernández, H.; Solís Céspedes, Javier CSIC ORCID ; Guillot, F.; Monroy, E.; Nevou, L.; Tchernycheva, M.; Julien, F. H. | artículo |
closedAccess | | 28-dic-2015 | III-nitride-based waveguides for ultrafast all-optical signal processing at 1.55 μm | Monteagudo-Lerma, L.; Naranjo, Fernando B.; Valdueza-Felip, S.; Jiménez-Rodríguez, M.; Monroy, E.; Postigo, Pablo Aitor CSIC ORCID; Corredera, Pedro CSIC ORCID; González-Herráez, Miguel | artículo |
closedAccess | | 2012 | Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer | Valdueza-Felip, S.; Ibáñez Insa, Jordi CSIC ORCID ; Monroy, E.; González-Herráez, Miguel CSIC ORCID; Artús, Lluís CSIC ORCID ; Naranjo, Fernando B. | artículo |
openAccess | | 14-nov-2018 | Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering | Valdueza-Felip, S.; Núñez-Cascajero, A.; Blasco, R.; Montero, D.; Grenet, L.; Mata, M. de la; Fernández, S.; Rodríguez de Marcos, Luís CSIC ORCID; Molina, S.I.; Olea, J.; Naranjo, Fernando B. | artículo |
closedAccess | | 16-ene-2016 | Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: effect of the buffer layer | Monteagudo-Lerma, L.; Valdueza-Felip, S.; Núñez-Cascajero, A.; Ruiz, A.; González-Herráez, Miguel CSIC ORCID; Monroy, E.; Naranjo, Fernando B. | artículo |
closedAccess | | 2009 | Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5 μm | Naranjo, Fernando B.; González-Herráez, Miguel CSIC ORCID; Valdueza-Felip, S.; Fernández, H.; Solís Céspedes, Javier CSIC ORCID ; Fernández, Susana; Monroy, E.; Grandal, J.; Sánchez-García, M. A. | artículo |
openAccess | | 2011 | Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths | Naranjo, Fernando B.; Kandaswamy, P. K.; Valdueza-Felip, S.; Calvo, V.; González-Herráez, Miguel CSIC ORCID; Martín-López, Sonia CSIC ORCID; Corredera, Pedro CSIC ORCID; Méndez, José Antonio CSIC; Mutta, G.R.; Lacroix, B.; Ruterana, P.; Monroy, E. | artículo |
closedAccess | | 2010 | Novel InN/InGaN multiple quantum well structures for slow-light generation at telecommunication wavelengths | Naranjo, Fernando B.; Kandaswamy, P. K.; Valdueza-Felip, S.; Lahourcade, L.; Calvo, V.; González-Herráez, Miguel CSIC ORCID; Martín-López, Sonia CSIC ORCID; Corredera, Pedro CSIC ORCID; Monroy, E. | artículo |
openAccess | | 2013 | Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs | Monteagudo-Lerma, L.; Valdueza-Felip, S.; Naranjo, Fernando B.; Corredera, Pedro CSIC ORCID; Rapenne, L.; Sarigiannidou, E.; Strasser, G.; Monroy, E.; González-Herráez, Miguel CSIC ORCID | artículo |