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Browsing by Author Gosálvez, M. A.

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RightsPreviewIssue DateTitleAuthor(s)Type
closedAccessaccesoRestringido.pdf.jpg2014Anisotropic etching on Si{110}: experiment and simulation for the formation of microstructures with convex cornersPal, Prem; Gosálvez, M. A. ; Sato, K.; Hida, H.; Xing, Yanartículo
closedAccessaccesoRestringido.pdf.jpg2014Complex chiral colloids and surfaces via high-index off-cut siliconMcPeak, Kevin M.; Gosálvez, M. A. ; Norris, David J.artículo
closedAccessaccesoRestringido.pdf.jpg7-Aug-2020Dominant contributions to the apparent activation energy in two-dimensional submonolayer growth: Comparison between Cu/Ni(111) and Ni/Cu(111)Alberdi-Rodríguez, Joseba; Acharya, Shree Ram; Rahman, T. S.; Arnau, Andrés ; Gosálvez, M. A. artículo
closedAccessaccesoRestringido.pdf.jpg2015Erratum: Anisotropic etching on Si{1 1 0}: experiment and simulation for the formation of microstructures with convex cornersPal, Prem; Gosálvez, M. A. ; Sato, K.; Hida, H.; Xing, Yanartículo
closedAccessaccesoRestringido.pdf.jpg2013Evokinetics: A software tool for the analysis of CVD growth of novel 2D materials?Gosálvez, M. A. comunicación de congreso
openAccessEvolutionary Continuous Cellular Automaton.pdf.jpgFeb-2012Evolutionary continuous cellular automaton for the simulation of wet etching of quartzFerrando, Néstor ; Gosálvez, M. A. ; Colóm, R. J.artículo
closedAccessaccesoRestringido.pdf.jpg2014Evolutionary kinetic Monte Carlo: Atomistic rates of surface-mediated processes from surface morphologiesFerrando, Néstor ; Gosálvez, M. A. ; Ayuela, Andrés artículo
closedAccessDec-2011Experimental procurement of the complete 3D etch rate distribution of Si in anisotropic etchants based on vertically micromachined wagon wheel samplesGosálvez, M. A. ; Pal, Prem; Ferrando, Néstor ; Hida, H.; Sato, K.artículo
closedAccessaccesoRestringido.pdf.jpg2011Fabrication of novel microstructures based on orientation-dependent adsorption of surfactant molecules in a TMAH solutionPal, Prem; Sato, K.; Gosálvez, M. A. ; Hida, H.; Shikida, M.artículo
openAccessFasterandexactimplementation.pdf.jpgFeb-2011Faster and exact implementation of the continuous cellular automaton for anisotropic etching simulationsFerrando, Néstor ; Gosálvez, M. A. ; Sato, K.artículo
closedAccessaccesoRestringido.pdf.jpg2013Implementation and evaluation of the Level Set method: Towards efficient and accurate simulation of wet etching for microengineering applicationsMontoliu, Carles ; Ferrando, Néstor ; Gosálvez, M. A. ; Cerdá, Joaquín ; Colóm, R. J.artículo
closedAccessaccesoRestringido.pdf.jpg2017Kinetic Monte Carlo method for the simulation of anisotropic wet etching of quartzZhang, Hui; Xing, Yan; Li, Yuan; Gosálvez, M. A. ; Qiu, Xiaoliartículo
closedAccessaccesoRestringido.pdf.jpg2013Level set implementation for the simulation of anisotropic etching: Application to complex MEMS micromachiningMontoliu, Carles ; Ferrando, Néstor ; Gosálvez, M. A. ; Cerdá, Joaquín ; Colóm, R. J.artículo
closedAccessaccesoRestringido.pdf.jpg2017Microscopic origin of the apparent activation energy in diffusion-mediated monolayer growth of two-dimensional materialsGosálvez, M. A. ; Alberdi-Rodríguez, Josebaartículo
closedAccessaccesoRestringido.pdf.jpg2020Multiscale analysis of phase transformations in self-assembled layers of 4,4′-biphenyl dicarboxylic acid on the Ag(001) surfaceProcházka, Pavel; Gosálvez, M. A. ; Kormoš, L.; Torre, Bruno de la; Gallardo, Aurelio; Alberdi-Rodríguez, Joseba; Chutora, Taras; Makoveev, Anton O.; Shahsavar, Azin; Arnau, Andrés ; Jelínek, P.; Čechal, Janartículo
openAccessOctree-based,GPU.pdf.jpgMar-2011Octree-based, GPU implementation of a continuous cellular automaton for the simulation of complex, evolving surfacesFerrando, Néstor ; Gosálvez, M. A. artículo
closedAccessaccesoRestringido.pdf.jpg2015Particle swarm optimization-based continuous cellular automaton for the simulation of deep reactive ion etchingLi, Yuan; Gosálvez, M. A. ; Pal, Prem; Sato, K.; Xing, Yanartículo
closedAccessaccesoRestringido.pdf.jpg2011Reconstructing the 3D etch rate distribution of silicon in anisotropic etchants using data from vicinal {100}, {110} and {111} surfacesGosálvez, M. A. ; Pal, Prem; Sato, K.artículo
closedAccessDec-2011Reliability assessment of the complete 3D etch rate distribution of Si in anisotropic etchants based on vertically micromachined wagon wheel samplesGosálvez, M. A. ; Pal, Prem; Ferrando, Néstor ; Sato, K.artículo
closedAccessaccesoRestringido.pdf.jpg2015Removal probability function for Kinetic Monte Carlo simulations of anisotropic etching of silicon in alkaline etchants containing additivesZhang, Hui; Gosálvez, M. A. ; Pal, Prem; Sato, K.artículo