Mostrando resultados 1 a 20 de 189
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| Derechos | Preview | Fecha Public. | Título | Autor(es) | Tipo |
| closedAccess | | abr-1981 | A charge density wave model for reconstructed monolayers of Co on Cu(100) | González Sotos, Luisa  ; Ferrer, S. ; Salmerón, Miquel; Vergés, José A. ; Ynduráin, Félix | Artículo |
| closedAccess | | nov-1996 | A General Approach to Measurement of Band Offsets of Near-GaAs Alloys | Whitaker, M. F.; González Sotos, Luisa | Artículo |
| openAccess |  | jul-2001 | A growth method to obtain flat and relaxed In0.2Ga0.8As on GaAs (0 0 1) developed through in situ monitoring of surface topography and stress evolution | González Sagardoy, María Ujué ; González Díez, Yolanda ; González Sotos, Luisa ; Calleja, Montserrat ; Silveira, Juan Pedro ; García Martínez, Jorge Manuel ; Briones Fernández-Pola, Fernando | Comunicación de congreso |
| closedAccess | | jul-2008 | A Method to Determine the Strain and Nucleation Sites of Stacked Nano-Objects | Molina, Sergio I.; Varela, María; Ben, Teresa; Sales, David L.; Pizarro, J.; Galindo, P. L.; Fuster, David ; González Díez, Yolanda ; González Sotos, Luisa ; Pennycook, Stephen J. | Artículo |
| closedAccess | | dic-1994 | A study of the defect structure in GaAs layers grown at low and high temperatures on Si(001) substrates | Aragón, G.; Molina, Sergio I.; Pacheco, F. J.; González Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando ; García, Rafael | Comunicación de congreso |
| closedAccess | | 1993 | A Study of the Defect Structure in GaAS1−xPx/GaAs AS x<0.25 | Aragón, G.; Castro, M. J. de; Molina, Sergio I.; González Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando ; García, Rafael | Comunicación de congreso |
| closedAccess | | 1993 | A study of the evolution process of antiphase boundaries in GaAs on Si | Molina, Sergio I.; Aragón, G.; García, Rafael; González Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando | Artículo |
| closedAccess | | 1-jul-1982 | A thermal desorption study of the adsorption of CO on Fe(110); enhancement of dissociation by surface defects | González Sotos, Luisa ; Miranda, Rodolfo; Ferrer, S. | Artículo |
| closedAccess | | feb-1997 | Advantages of thin interfaces in step-graded buffer structures | González, David; Araújo, D.; González Sotos, Luisa ; González Díez, Yolanda ; Aragón, G.; García, Rafael | Comunicación de congreso |
| closedAccess |  | 30-abr-2002 | AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1−xP epitaxial layers | Eremenko, V.; González Sotos, Luisa ; González Díez, Yolanda ; Vdovin, V.; Vázquez, Luis ; Aragón, G.; Herrera, Miriam; Briones Fernández-Pola, Fernando | Póster |
| closedAccess | | ene-1995 | Atomic core structure of Lomer dislocation at GaAs/(001)Si interface | Vilà, A.; Cornet, A.; Morante, J. R.; González Díez, Yolanda ; González Sotos, Luisa ; Ruterana, P. | Artículo |
| closedAccess | | 1989 | Atomic layer MBE growth and characterization of AlAs/InAs strained layer superlattices on GaAs | González Sotos, Luisa ; Ruiz, A.; Mazuelas Esteban, Ángel José ; Armelles Reig, Gaspar ; Recio Segoviano, Miguel ; Briones Fernández-Pola, Fernando | Comunicación de congreso |
| closedAccess | | dic-1989 | Atomic layer molecular beam epitaxy (Almbe) of III–V compounds: Growth modes and applications | Briones Fernández-Pola, Fernando ; González Sotos, Luisa ; Ruiz, A. | Artículo |
| closedAccess | | 1995 | Atomic layer molecular beam epitaxy growth of GaAs1−xPx layers: Study of P2 incorporation by the reflectance difference technique | González Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando | Artículo |
| closedAccess | | nov-1989 | Atomic layer molecular beam epitaxy growth of InAs on GaAs substrates | Ruiz, A.; González Sotos, Luisa ; Mazuelas Esteban, Ángel José ; Briones Fernández-Pola, Fernando | Artículo |
| closedAccess | | 1-jun-1990 | Atomic layer molecular beam epitaxy of InAs/A1As heterostructures | Vázquez, M.; Silveira, Juan Pedro ; González Sotos, Luisa ; Pérez, M.; Armelles Reig, Gaspar ; Miguel, José Luis de; Briones Fernández-Pola, Fernando | Artículo |
| openAccess |  | mar-2000 | Band Alignments in InxGa1–xP/GaAs Heterostructures Investigated by Pressure Experiments | Martínez-Pastor, Juan; Camacho, J.; Rudamas, C.; Cantarero, Andrés; González Sotos, Luisa ; Syassen, K. | Artículo |
| openAccess |  | 28-jun-2011 | Band-gap renormalization in InP/GaxIn1-xP quantum dots | Nowak, A. K.; Gallardo, E.; Meulen, H. P. van der; Calleja, J. M.; Ripalda, José María ; González Sotos, Luisa ; González Díez, Yolanda | Artículo |
| openAccess |  | 25-sep-2008 | Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells | Alonso-Álvarez, Diego ; Taboada, Alfonso G.; Ripalda, José María ; Alén, Benito ; González Díez, Yolanda ; González Sotos, Luisa ; García Martínez, Jorge Manuel ; Briones Fernández-Pola, Fernando ; Martí Vega, Antonio; Luque López, Antonio; Sánchez, A. M.; Molina, Sergio I. | Artículo |
| closedAccess | | abr-2002 | Carrier Recombination in InAs/GaAs Self-Assembled Quantum Dots under Resonant Excitation Conditions | Rudamas, C.; Martínez-Pastor, Juan; García-Cristobal, Alberto; Roussignol, Philippe; García Martínez, Jorge Manuel ; González Sotos, Luisa | Artículo |
