Showing results 1 to 20 of 53
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| Rights | Preview | Issue Date | Title | Author(s) | Type |
| openAccess |  | 1991 | A New Hydrogen Sensor Based on a Pt/GaAs Schottky Diode | Lechuga, Laura M.  ; Calle Martín, Ana ; Golmayo, Dolores ; Tejedor, P.; Briones Fernández-Pola, Fernando | Artículo |
| openAccess |  | 15-Sep-1991 | The ammonia sensitivity of Pt/GaAs Schottky barrier diodes | Lechuga, Laura M. ; Calle Martín, Ana ; Golmayo, Dolores ; Briones Fernández-Pola, Fernando | Artículo |
| closedAccess | | Jun-1992 | Ammonia sensitivity of Pt/GaAs Schottky barrier diodes. Improvement of the sensor with an organic layer | Lechuga, Laura M. ; Calle Martín, Ana ; Golmayo, Dolores ; Briones Fernández-Pola, Fernando ; Abajo González, Javier de ; Campa, José G. de la | Artículo |
| openAccess |  | 14-Feb-2004 | Analysis of local deformations in heterostructures containing short period superlattices by high-resolution transmission electron microscopy | Quintana Rodríguez, Carmen ; Golmayo, Dolores ; Dotor, María Luisa ; Lancin, M. | Artículo |
| openAccess |  | Nov-2000 | Characterization of SnTe-doped InP grown by solid-source atomic layer molecular beam epitaxy | Postigo, Pablo Aitor ; Dotor, María Luisa ; García-Pérez, Fernando ; Golmayo, Dolores ; Briones Fernández-Pola, Fernando | Artículo |
| openAccess |  | 10-Dec-2007 | Confined photon modes with triangular symmetry in hexagonal microcavities in 2D photonic Crystals | Kosevich, Yuriy A.; Sánchez-Dehesa, José; Alija, Alfonso R.; Martínez Rodríguez, Luis Javier ; Dotor, María Luisa ; Golmayo, Dolores ; Postigo, Pablo Aitor | Pre-print |
| closedAccess | | Mar-1992 | Different catalytic metals (Pt, Pd and Ir) for GaAs Schottky barrier sensors | Lechuga, Laura M. ; Calle Martín, Ana ; Golmayo, Dolores ; Briones Fernández-Pola, Fernando | Artículo |
| closedAccess |  | 1996 | Effect of phosphorus on electrical properties of undoped InP grown at low temperature by atomic layer molecular beam epitaxy | Postigo, Pablo Aitor ; García-Pérez, Fernando ; Dotor, María Luisa ; Golmayo, Dolores ; Briones Fernández-Pola, Fernando | Artículo |
| openAccess |  | 1999 | Electrical and optical properties of Be doped InP grown at low temperature by solid source atomic layer molecular beam epitaxy | Postigo, Pablo Aitor ; Dotor, María Luisa ; Huertas, P.; García-Pérez, Fernando ; Golmayo, Dolores ; Briones Fernández-Pola, Fernando | Artículo |
| openAccess |  | 1995 | Electrical and optical properties of undoped InP grown at low temperature by atomic layer molecular beam epitaxy | Postigo, Pablo Aitor ; Dotor, María Luisa ; Huertas, P.; Golmayo, Dolores ; Briones Fernández-Pola, Fernando | Artículo |
| openAccess |  | 4-Aug-2005 | Fotopletismografía por transmisión con múltiples diodos láser en el infrarrojo cercano durante el ejercicio físico | López Silva, Sonnia María ; Giannetti, R.; Dotor, María Luisa ; Golmayo, Dolores ; Martín, Pedro; Miguel-Tobal, F.; Bilbao Monasterio, Amaya ; Silveira, Juan Pedro | Artículo |
| closedAccess |  | 1993 | (Ga0.22In0.78As)m{plus 45 degree rule}(Ga0.22In0.78P)m superlattices grown by atomic-layer molecular beam epitaxy on InP | Dotor, María Luisa ; Golmayo, Dolores ; Briones Fernández-Pola, Fernando | Artículo |
| closedAccess |  | 1993 | Ga0.47In0.53As multiquantum well heterostructures, confined by pseudoquaternary (InP)n/(Ga0.47In 0.53As)m short period superlattices lattice-matched to InP | Dotor, María Luisa ; Huertas, P.; Golmayo, Dolores ; Briones Fernández-Pola, Fernando | Artículo |
| openAccess | | 2012 | Heuristic algorithm for photoplethysmographic heart rate tracking during maximal exercise test | López Silva, Sonnia María ; Giannetti, R.; Dotor, María Luisa ; Silveira, Juan Pedro ; Golmayo, Dolores ; Miguel-Tobal, F.; Bilbao Monasterio, Amaya ; Galindo Canales, M.; Martín Escudero, Pilar | Artículo |
| closedAccess | | Jun-1991 | Hydrogen sensor based on a Pt/GaAs Schottky diode | Lechuga, Laura M. ; Calle Martín, Ana ; Golmayo, Dolores ; Briones Fernández-Pola, Fernando | Artículo |
| closedAccess | | 1985 | Hydrogen sulphide doping of GaAs and AlxGa1−xAs grown by molecular beam epitaxy (MBE) | Briones Fernández-Pola, Fernando ; Golmayo, Dolores ; González Sotos, Luisa ; Miguel, José Luis de | Artículo |
| closedAccess |  | 2002 | Improvement of the temperature characteristic of 1.3 μm Gainasp laser diodes with GaInAsP/InP short-period superlattice barriers | Postigo, Pablo Aitor ; Golmayo, Dolores ; Gómez, H.; Rodríguez, D.; Dotor, María Luisa | Artículo |
| closedAccess | | Mar-1995 | InP tunnel junctions grown by atomic layer molecular beam epitaxy on InP and InP-on-Si substrates | Dotor, María Luisa ; Golmayo, Dolores ; Calle Martín, Ana ; Sendra, J. R.; Anguita, José Virgilio ; González Sotos, Luisa ; González Díez, Yolanda ; Briones Fernández-Pola, Fernando | Artículo |
| openAccess |  | 2010 | (InP)5/(Ga0.47In0.53As)5 superlattice confined 1.5 μm multiquantum well laser grown by all-solid source atomic layer molecular beam epitaxy | Dotor, María Luisa ; Huertas, P.; Postigo, Pablo Aitor ; Golmayo, Dolores ; Briones Fernández-Pola, Fernando | Artículo |
| closedAccess | | Oct-2007 | Laser nanosources based on planar photonic crystals as new platforms for nanophotonic devices | Postigo, Pablo Aitor ; Rodríguez Alija, Alfonso ; Martínez Rodríguez, Luis Javier ; Dotor, María Luisa ; Golmayo, Dolores ; Sánchez-Dehesa, José; Seassal, Christian; Viktorovitch, P.; Galli, Matteo; Politi, Alberto; Patrini, M.; Andreani, Lucio C. | Artículo |
