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RightsPreviewIssue DateTitleAuthor(s)Type
openAccessTW202027277A_MOSFET.pdf.jpg16-Jul-2020A device for improving the mobility of carriers in a MOSFET channel on silicon carbideTorregrosa, Frank; Roux, Laurent; Godignon, Philippesolicitud de patente
openAccessSG11202102544UA_MOSFET.pdf.jpg29-Apr-2021A device for improving the mobility of carriers in a mosfet channel on silicon carbideTorregrosa, Frank; Roux, Laurent; Godignon, Philippesolicitud de patente
closedAccessaccesoRestringido.pdf.jpgMar-2006A SiC microdevice for the minimally invasive monitoring of ischemia in living tissuesGómez, Rodrigo; Ivorra Cano, Antoni; Villa, Rosa CSIC ORCID ; Godignon, Philippe; Millán, José; Erill, Iván CSIC ORCID; Solà, Anna M. CSIC ORCID; Hotter, Georgina CSIC ORCID ; Palacios, Luisartículo
closedAccessaccesoRestringido.pdf.jpg2012A simple approach for DNA detection on carbon nanotube microelectrode arraysPacios, Merce; Yilmaz, N.; Martín-Fernández, I.; Villa, Rosa CSIC ORCID ; Godignon, Philippe; Valle, Manel del; Bartrolí, J.; Esplandiú, María J. CSIC ORCIDartículo
closedAccess1-May-2018Advanced processing for mobility improvement in 4H-SiC MOSFETs: A reviewCabello, Maria; Soler, Victor; Rius, Gemma CSIC ORCID ; Montserrat, Josep; Rebollo, José; Godignon, Philippeartículo
openAccessCarbon nanotubes.pdf.jpg2011Carbon nanotubes as platforms for electrochemical and electronic detection of biorecognition processesPacios, Merce; Bonanni, Alessandra; Valle, Manel del; Esplandiú, María J. CSIC ORCID; Martín-Fernández, I.; Borrisé, Xavier CSIC ORCID; Lora-Tamayo D’Ocón, Emilio; Villa, Rosa CSIC ORCID ; Perez Murano, Francesc X. CSIC ORCID ; Godignon, Philippepóster de congreso
openAccessCarrier Concentration Analysis in 1.2 kV SiC Schottky Diodes under Current Crowding.pdf.jpg1-Jun-2022Carrier Concentration Analysis in 1.2 kV SiC Schottky Diodes Under Current CrowdingBonet, Ferran; Aviñó Salvadó, Oriol CSIC ORCID ; Vellvehi, Miquel; Jorda, Xavier; Godignon, Philippe; Perpiñà, Xavierartículo
openAccess1-s2.0-S0167931707007526-main.pdf.jpg2008Characterization at the nanometer scale of local electron beam irradiation of CNT based devicesRius Suñé, Gemma; Verdaguer, Albert CSIC ORCID; Chaves, Ferney Alveiro; MARTIN FERNANDEZ, IÑIGO ; Godignon, Philippe; Lora-Tamayo D’Ocón, Emilio; Jiménez, David CSIC ORCID; Perez Murano, Francesc X. CSIC ORCID artículo
openAccess2140049_T3.pdf.jpg16-Feb-2000Componenete limitador de corriente y procedimiento de realizaciónGodignon, Philippe; De Palma, Jean-François; Deshayes, René; Fernández, Juan; Millán, Josépatente
openAccessES2769265T3.pdf.jpg25-Jul-2020Conjunto de máscaras metálicas auto alineadas para depositar, de modo selectivo, capas finas sobre dispositivos y substratos microelectrónicos y método de empleoJordà, Xavier; Perpiñà, X.; Vellvehi Hernández, Miquel; Sánchez, David CSIC ORCID ; Godignon, Philippetraducción de patente
openAccessWO2020058597A1.pdf.jpg26-Mar-2020Device for improving the mobility of carriers in a mosfet channel on silicon carbideTorregrosa, Frank; Roux, Laurent; Godignon, Philippesolicitud de patente
openAccessUS2021273056A1_MOSFET.pdf.jpg2-Sep-2021Device for improving the mobility of carriers in a MOSFET channel on silicon carbideTorregrosa, Frank; Roux, Laurent; Godignon, Philippesolicitud de patente
openAccessEP3853906B1_MOSFET.pdf.jpg28-Jul-2021Dispositif d'amelioration de la mobilite des porteurs dans un canal de MOSFET sur carbure de siliciumTorregrosa, Frank; Roux, Laurent; Godignon, Philippepatente
openAccessFR3086101A1_MOSFET.pdf.jpg23-Mar-2020Dispositif d'amelioration de la mobilite des porteurs dans un canal de mosfet sur carbure de siliciumTorregrosa, Frank; Roux, Laurent; Godignon, Philippesolicitud de patente
openAccessFR3086101B1_MOSFET.pdf.jpg20-Mar-2020Dispositif d'amelioration de la mobilite des porteurs dans un canal de MOSFET sur carbure de siliciumTorregrosa, Frank; Roux, Laurent; Godignon, Philippepatente
openAccessES2926589T3_MOSFET.pdf.jpg27-Oct-2022Dispositivo para mejorar la movilidad de portadores en un canal MOSFET sobre carburo de silicioTorregrosa, Frank; Roux, Laurent; Godignon, Philippetraducción de patente
openAccess263102_1_online.pdf.jpg27-Oct-2008Early stage formation of graphene on the C-face of 6H-SiCCamara, Nicolas; Rius, Gemma CSIC ORCID ; Huntzinger, Jean Roch; Tiberj, Antoine; Magaud, Laurence; Mestres, Narcís CSIC ORCID ; Godignon, Philippe; Camassel, Jeanartículo
openAccess1-s2.0-S0169433208025336-main.pdf.jpg1-Apr-2009Effects of cap layer on ohmic Ti/Al contacts to Si <sup>+</sup> implanted GaNPlacidi, Marcel; Pérez-Tomás, Amador CSIC ORCID; Constant, Aurore; Rius, Gemma CSIC ORCID ; Mestres, Narcís CSIC ORCID ; Millán, Jose; Godignon, Philippeartículo
openAccessTNS3029730_sense_marca_proofs_xo_encara_sense_correccions_finals.pdf.jpg8-Oct-2020Electron, Neutron, and Proton Irradiation Effects on SiC Radiation DetectorsRafí, Joan Marc ; Pellegrini, Giulio CSIC ORCID; Godignon, Philippe; Otero-Ugobono, Sofía; Rius, Gemma CSIC ORCID ; Tsunoda, Isao; Yoneoka, Masashi; Takakura, Kenichiro; Kramberger, Gregor; Moll, Michaelartículo
openAccessGraphIn2016GarciaAlberto.pdf.jpg2016Epitaxial graphene on SiC: a route towards high-performance electronic devicesGarcía-García, A.; Serrano-Ramón, Luis CSIC; Ballestar, A.; Rius, Gemma CSIC ORCID ; Godignon, Philippe; Ibarra, M. Ricardo CSIC ORCID; Teresa, José María de CSIC ORCID presentación