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Browsing by Author Asensio, María C.

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RightsPreviewIssue DateTitleAuthor(s)Type
openAccessMAYER_comprehensive_Scientific Reports_2020.pdf.jpg12-Oct-2020A comprehensive examination of the local- and long-range structure of Sb6O13 pyrochlore oxideMayer, Sergio F.; Rodrigues, J. E.; Marini, C.; Fernández-Díaz, M.T.; Falcón, H.; Asensio, María C. CSIC ORCID; Alonso, J. A. CSIC ORCIDartículo
openAccessphase of silicene.pdf.jpg2014Atomic structure of the √3 × √3 phase of silicene on Ag(111)Cahangirov, Seymur; Ongun Özçelik, Veli; Xian, Lede; Cho, Suyeon; Asensio, María C. CSIC ORCID; Ciraci, Salim; Rubio, Angelartículo
openAccessmaterials-12-00666-v2.pdf.jpg23-Feb-2019Electroanalytical Performance of Nitrogen-Doped Graphene Films Processed in One Step by Pulsed Laser Deposition Directly Coupled with Thermal AnnealingBourquard, Florent; Bleu, Yannick; Loir, Anne-Sophie; Caja-Munoz, Borja; Ávila, José CSIC ORCID; Asensio, María C. CSIC ORCID; Raimondi, Gaëtan; Shokouhi, Maryam; Rassas, Ilhem; Farre, Carole; Chaix, Carole; Barnier, Vincent; Jaffrezic-Renault, Nicole; Garrelie, Florence; Donnet, Christopheartículo
openAccessMartín González, M.S. et al Solid State Sciences_2_2000.pdf.jpg1-Sep-2000In situ reduction of (100) SrTiO3Martín-González, Marisol; Aguirre, Myriam H.; Morán, Emilio; Alario-Franco, Miquel Á.; Pérez-Dieste, Virginia; Ávila, José CSIC ORCID; Asensio, María C. CSIC ORCIDartículo
openAccessASENSIO_large-area_nature_2020.pdf.jpg28-Jan-2020Large-area epitaxial growth of curvature-stabilized ABC trilayer grapheneGao, Zhaoli; Wang, Sheng; Berry, Joel; Zhang, Qicheng; Gebhardt, Julian; Parkin, William M.; Ávila, José CSIC ORCID; Yi, Hemian; Chen, Chaoyu; Hurtado-Parra, Sebastián; Drndić, Marija; Rappe, Andrew M.; Srolovitz, David J.; Kikkawa, James M.; Luo, Zhengtang; Asensio, María C. CSIC ORCID; Wang, Feng; Johnson, A. T. Charlieartículo
openAccess2014Model of √3x√3 phases of silicene and its multilayersCahangirov, Seymur; Ongun Özçelik, Veli; Ciraci, Salim; Asensio, María C. CSIC ORCID; Rubio, Angelpresentación
openAccessValbunea_PhysRevB_2019_editorial.pdf.jpg8-Feb-2019Polarization dependence of angle-resolved photoemission with submicron spatial resolution reveals emerging one-dimensionality of electrons in NbSe3Valbuena, Miguel Ángel Rodríguez; Chudzinski, Piotr; Pons, Stephane; Conejeros, Sergio; Alemany, Pere; Canadell, Enric CSIC ORCID; Berger, Helmuth; Frantzeskakis, Emmanouil; Ávila, José CSIC ORCID; Asensio, María C. CSIC ORCID; Giamarchi, Thierry; Grioni, Marcoartículo
openAccessJAMartinG.pdf.jpg1998Semiconductor-metal transition of the single-domain K/Si(100)-(2×1) interface by Fermi-surface determinationMartín-Gago, José A. CSIC ORCID ; Asensio, María C. CSIC ORCID; Aebi, P.; Fasel, Román; Naumovic, D.; Osterwalder, J.; Refolio, M. C.; López Sancho, José María ; Rubio, J.artículo
openAccessZribi_Strong_2D_Mat_and_Applications_s41699-019-0109-3.pdf.jpg2019Strong interlayer hybridization in the aligned SnS2/WSe2 hetero-bilayer structureZribi, Jihene; Khalil, Lama; Zheng, Biyuan; Avila, José; Pierucci, Debora; Brulé, Thibault; Chaste, Julien CSIC ORCID; Lhuillier, Emmanuel; Asensio, María C. CSIC ORCID; Pan, Anlian; Ouerghi, Abdelkarimartículo
closedAccessaccesoRestringido.pdf.jpg2019Visualizing the Effect of an Electrostatic Gate with Angle-Resolved Photoemission SpectroscopyJoucken, F.; Avila, J.; Ge, Z.; Quezada-Lopez, E.A.; Yi, H.; Le Goff, R.; Baudin, E.; Davenport, J.L.; Watanabe, K.; Taniguchi, T.; Asensio, María C. CSIC ORCID; Velasco, J.artículo