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Browsing by Author Aragón, G.

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Showing results 1 to 9 of 9
RightsPreviewIssue DateTitleAuthor(s)Type
closedAccessDec-1994A study of the defect structure in GaAs layers grown at low and high temperatures on Si(001) substratesAragón, G.; Molina, Sergio I.; Pacheco, F. J.; González Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando ; García, Rafaelcomunicación de congreso
closedAccess1993A Study of the Defect Structure in GaAS1−xPx/GaAs AS x<0.25Aragón, G.; Castro, M. J. de; Molina, Sergio I.; González Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando ; García, Rafaelcomunicación de congreso
closedAccess1993A study of the evolution process of antiphase boundaries in GaAs on SiMolina, Sergio I.; Aragón, G.; García, Rafael; González Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando artículo
closedAccessFeb-1997Advantages of thin interfaces in step-graded buffer structuresGonzález, David; Araújo, D.; González Sotos, Luisa ; González Díez, Yolanda ; Aragón, G.; García, Rafaelcomunicación de congreso
closedAccessaccesoRestringido.pdf.jpg30-Apr-2002AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1−xP epitaxial layersEremenko, V.; González Sotos, Luisa ; González Díez, Yolanda ; Vdovin, V.; Vázquez, Luis  ; Aragón, G.; Herrera, Miriam; Briones Fernández-Pola, Fernando póster de congreso
openAccesshttp___scitation.aip.org10.1063_1.pdf.jpg15-Dec-1998Correlation between optical properties and barrier composition in InxGa1−xP/GaAs quantum wellsMartínez Pastor, Juan Pascual ; González Sotos, Luisa ; Aragón, G.; Guenaud, Ch.; Deleporte, E.artículo
closedAccessJan-1993Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on SiMolina, Sergio I.; Aragón, G.; González Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando ; Ponce, F. A.; García, Rafaelartículo
openAccesshttp___scitation.aip.org=10.1063_1.pdf.jpg1996Relaxation behavior of undoped InxGa1−xP 0.5<x<0.7 grown on GaAs by atomic layer molecular‐beam epitaxyGonzález Sotos, Luisa ; González Díez, Yolanda ; Aragón, G.; Castro, M. J. de; Dotor, María Luisa ; Dunstan, D. J.artículo
closedAccessaccesoRestringido.pdf.jpg1993Structural characterization of highly strained InAs N monolayer lasers and quantum well structures by X-ray diffraction and transmission electron microscopyMazuelas Esteban, Ángel José ; Molina, Sergio I.; Aragón, G.; Meléndez Sánchez, Juan ; Dotor, María Luisa ; Huertas, P.; Briones Fernández-Pola, Fernando artículo