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Showing results 1 to 14 of 14
RightsPreviewIssue DateTitleAuthor(s)Type
openAccessElectric-Field Screening.pdf.jpg2013Electric-field screening in atomically thin layers of MoS2: The role of interlayer couplingCastellanos-Gómez, Andrés ; Cappelluti, E. ; Roldán, Rafael ; Agraït, Nicolás; Guinea, F. ; Rubio-Bollinger, Gabinoartículo
openAccessboletinGEC_025_art.3_Castellanos.pdf.jpgSep-2012Electronic inhomogeneities in grapheme: the role of the substrate interaction and chemical dopingCastellanos-Gómez, Andrés ; Arramel; Wojtaszek, M.; Smit, R. H. M.; Tombros, N.; Agraït, Nicolás; Wees, B. J. van; Rubio-Bollinger, G.artículo
openAccessposttrichalcoge.pdf.jpg2017Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenidesIsland, Joshua O.; Molina-Mendoza, Aday J.; Barawi, Mariam; Biele, Robert; Flores, Eduardo; Clamagirand, José M.; Ares, José R.; Sánchez, Carlos ; Zant, Herre S. J. van der; D'Agosta, Roberto; Ferrer, Isabel J.; Castellanos-Gómez, Andrés artículo
openAccesselectronics-06-00028-v2.pdf.jpg31-Mar-2017High Throughput Characterization of Epitaxially Grown Single-Layer MoS2Ghasemi, Foad; Frisenda, Riccardo; Dumcenco, Dumitru; Kis, Andras; Pérez de Lara, David; Castellanos-Gómez, Andrés artículo
openAccessLocal strain.pdf.jpg2013Local strain engineering in atomically thin MoS2Castellanos-Gómez, Andrés ; Roldán, Rafael ; Cappelluti, E. ; Buscema, M.; Guinea, F. ; Zant, Herre S. J. van der; Steele, Gary A.artículo
embargoedAccessYueNiu_Polarization_TiS3_photodetector_vArXiv.pdf.jpg4-Oct-2018Polarization‐Sensitive and Broadband Photodetection Based on a Mixed‐Dimensionality TiS3/Si p–n JunctionNiu, Yue; Frisenda, Riccardo; Flores, Fernando; Ares, José R.; Jiao, Weicheng; Pérez de Lara, David; Sánchez López, Carlos; Wang, Rongguo; Ferrer, Isabel J.; Castellanos-Gómez, Andrés artículo
embargoedAccessprogress on black phosphorus optics_arXiv_version.pdf.jpg4-Oct-2018Progress on Black Phosphorus PhotonicsDeng, Bingchen; Frisenda, Riccardo; Li, Cheng; Chen, Xiaolong; Castellanos-Gómez, Andrés ; Xia, Fengnianartículo
embargoedAccessAuthorsVersion_BucklingMetrology_postreferee.pdf.jpg7-Jan-2019Revisiting the Buckling Metrology Method to Determine the Young's Modulus of 2D MaterialsIguiniz, Nestor; Frisenda, Riccardo; Bratschitsch, Rudolf; Castellanos-Gómez, Andrés artículo
closedAccessaccesoRestringido.pdf.jpg7-Aug-2014Single-layer MoS2 roughness and sliding friction quenching by interaction with atomically flat substratesQuereda, J.; Castellanos-Gómez, Andrés ; Agrait de la Puente, Nicolás; Rubio-Bollinger, Gabinoartículo
openAccessstrain_manuskript_vDIGITALCSIC.pdf.jpg1-Feb-2018Strain Control of Exciton–Phonon Coupling in Atomically Thin SemiconductorsNiehues, Iris; Castellanos-Gómez, Andrés ; Bratschitsch, Rudolfartículo
closedAccessaccesoRestringido.pdf.jpg22-Jul-2015Strain engineering in semiconducting two-dimensional crystalsRoldán, Rafael ; Castellanos-Gómez, Andrés ; Cappelluti, Emmanuele; Guinea, Franciscoartículo
closedAccess11-May-2016Strong modulation of optical properties in black phosphorus through strain-engineered ripplingQuereda, Jorge; San-Jose, Pablo; Parente, Vincenzo; Vaquero-Garzon, Luis; Molina-Mendoza, Aday J.; Agrait, Nicolás; Rubio-Bollinger, Gabino; Guinea, Francisco; Roldán, Rafael ; Castellanos-Gómez, Andrés artículo
closedAccessaccesoRestringido.pdf.jpgDec-2016Strong quantum confinement effect in the optical properties of ultrathin α-In2Se3Quereda, Jorge; Biele, Robert; Rubio-Bollinger, Gabino; Agraït, Nicolás; D'Agosta, Roberto; Castellanos-Gómez, Andrés artículo
nanomaterials-08-00725.pdf.jpg14-Sep-2018Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS2, MoSe2, WS2 and WSe2Niu, Yue; González Abad, Sergio; Frisenda, Riccardo; Marauhn, Philipp; Drüppel, Matthias; Gant, Patricia; Schmidt, Robert; Taghavi, Najme S.; Barcons, David; Molina-Mendoza, Aday J.; Vasconcellos, Steffen Michaelis de; Bratschitsch, Rudolf; Pérez de Lara, David; Rohlfing, Michael; Castellanos-Gómez, Andrés artículo