Optical activation of Er ions by Si nanocrystals in films synthesized by sol-gel chemistry and ion implantation

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Título:	Optical activation of Er ions by Si nanocrystals in films synthesized by sol-gel chemistry and ion implantation
Autor:	Pivin, J. C.; Jiménez de Castro, Miguel CSIC ORCID; Sendova-Vassileva, M.
Fecha de publicación:	2003
Editor:	Kluwer Academic Publishers
Citación:	Journal of Materials Science: Materials in Electronics 14: 661- 664 (2003)
Resumen:	The sensitization of the infrared luminescence of Er ions by Si clusters is studied in oxide films derived from tetraethoxysilane and triethoxysilane gels, doped chemically or by ion implantation with Er and/or Si. No quenching of the luminescence by impurities and structural defects is observed with respect to ion-implanted silica, and a maximum enhancement is observed in the SiO1.5 suboxide formed from triethoxysilane. The segregation of erbium silicide or oxide, depending on the synthesis procedure, deactivates the Er ions when their concentration exceeds 1 at % or the temperature of annealing is above 1050 °C. © 2003
URI:	http://hdl.handle.net/10261/88340
Identificadores:	issn: 0957-4522
Aparece en las colecciones:	(CFMAC-IO) Artículos