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Título: | Operation limits for RTD-based MOBILE circuits |
Autor: | Quintana, J. M. CSIC ORCID; Avedillo, María J. CSIC ORCID; Núñez, Juan CSIC ORCID ; Pettenghi, Héctor CSIC ORCID | Fecha de publicación: | 2009 | Editor: | Institute of Electrical and Electronics Engineers | Citación: | IEEE Transactions on Circuits and Systems I: Regular Papers 56(2): 350-363 (2009) | Resumen: | Resonant-tunneling-diode (RTD)-based MOnostable-BIstable Logic Element (MOBILE) circuits operate properly in a certain frequency range. They exhibit both a minimum operating frequency and a maximum one. From a design point of view, it should be desirable to have gates with a correct operation from dc up to the maximum operating frequency (i.e., without the minimum bound). This paper undertakes this problem by analyzing how transistors and RTDs interact in RTD-based circuits. Two malfunctions have been identified: the incorrect evaluation of inputs and the lack of self-latching operation. The difficulty to study these problems in an analytical way has been overcome by resorting to series expansions for both the RTD and the heterojunction field-effect transistor I-V characteristics in the points of interest. We have obtained analytical expression linking representative device parameters and technological setup, for a MOBILE-based circuit to operate correctly. © 2009 IEEE. | URI: | http://hdl.handle.net/10261/86566 | DOI: | 10.1109/TCSI.2008.925943 | Identificadores: | doi: 10.1109/TCSI.2008.925943 issn: 1549-8328 |
Aparece en las colecciones: | (IMSE-CNM) Artículos |
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MOBILE-circuits.pdf | 424,63 kB | Adobe PDF | Visualizar/Abrir |
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