Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/74894
COMPARTIR / EXPORTAR:
logo share SHARE logo core CORE BASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE

Invitar a revisión por pares abierta
Título

Heterostructure and compositional depth profile of low-temperature processed lead titanate-based ferroelectric thin films prepared by photochemical solution deposition

AutorBretos, Íñigo CSIC ORCID; Jiménez, Ricardo CSIC ORCID; Rodríguez-Castellón, Enrique; García López, J. CSIC ORCID; Calzada, M. L. CSIC ORCID
Fecha de publicación2008
EditorAmerican Chemical Society
CitaciónChemistry of Materials 20(4): 1443-1450 (2008)
ResumenThe heterostructure and compositional depth profile of low-temperature processed (Pb0.76Ca0.24)TiO3 (PCT24) ferroelectric thin films have been studied in the present work. The films were prepared by ultraviolet (UV) sol-gel photoannealing (also called photochemical solution deposition, PCSD) onto platinized silicon substrates and crystallized at 450 °C in air and oxygen atmospheres. Despite using such a low temperature, analysis carried out by X-ray photoelectron spectroscopy (XPS) revealed the total lack of organic rests within the bulk film. Complementary information about the heterostructure of the films was also obtained by Rutherford backscattering spectroscopy (RBS). Both analytical techniques detected the presence of a lead gradient in the films, together with small fluctuations on the concentration of this element along the bulk film. The RBS study also showed that the films of this work develop a PtxPb interface between the ferroelectric layer and the Pt bottom electrode. The thickness of this interlayer is much lower than that of the interface formed in PCT24 films prepared at higher temperatures (650 °C) without UV irradiation (conventional CSD). On the other hand, the low processing temperature here used minimizes the lead loss by volatilization, as deduced from the RBS simulated spectra of the films. Thus, the lead excess incorporated in the precursor solution remains in the films after the crystallization treatment. This result would suppose a significant advance toward the environmentally low-impact processing of lead-containing ferroelectric films with applications in electrical and electronic components (e.g., piezoelectric devices). © 2008 American Chemical Society.
Versión del editorhttps://doi.org/10.1021/cm7025812
URIhttp://hdl.handle.net/10261/74894
DOI10.1021/cm7025812
Identificadoresdoi: 10.1021/cm7025812
issn: 0897-4756
e-issn: 1520-5002
Aparece en las colecciones: (CNA) Artículos
(ICMM) Artículos




Ficheros en este ítem:
Fichero Descripción Tamaño Formato
Bretos_Heterostructure_ChemMate- postprint.pdf422,09 kBAdobe PDFVista previa
Visualizar/Abrir
Mostrar el registro completo

CORE Recommender

SCOPUSTM   
Citations

35
checked on 23-mar-2024

WEB OF SCIENCETM
Citations

31
checked on 23-feb-2024

Page view(s)

308
checked on 29-mar-2024

Download(s)

1
checked on 29-mar-2024

Google ScholarTM

Check

Altmetric

Altmetric


NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.