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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/7485
Title: Experimental study of a broad area vertical-cavity semiconductor optical amplifier
Authors: Marino, Francesco; Balle, Salvador
Keywords: Semiconductor optical amplifiers (SOAs)
[PACS] Optical parametric oscillators and amplifiers
[PACS] Resonators, cavities, amplifiers, arrays, and rings
[PACS] Beam characteristics: profile, intensity, and power; spatial pattern formation
[PACS] Birefringence, polarization
Issue Date: 13-Jan-2004
Publisher: Elsevier
Citation: Optics Communications 231: 325-330 (2004)
Abstract: An experimental study of a broad-area vertical-cavity semiconductor optical amplifier in the 980 nm wavelength range is reported. We show that the gain and the saturation power in such a device increase as the transverse dimension of the injected beam is increased. A gain of 16.3 dB with 0.8 nm optical bandwidth and saturation power of 1.4 mW has been obtained. The polarization sensitivity of the device is also studied. We show that birefringence in the cavity affects the polarization insensitivity expected in ideal devices as a consequence of the circular symmetry of the cavity. A brief study of the wavelength dependence of the output transverse profile is also reported.
Description: 6 pages, 5 figures.-- PACS nrs.: 42.65.Yj; 42.60.Da; 42.60.Jf; 42.81.Gs.
Publisher version (URL): http://dx.doi.org/10.1016/j.optcom.2003.11.067
URI: http://hdl.handle.net/10261/7485
ISSN: 0030-4018
DOI: 10.1016/j.optcom.2003.11.067
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