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dc.contributor.authorFerrer, F. J.-
dc.contributor.authorGil-Rostra, J.-
dc.contributor.authorGonzález-García, Lola-
dc.contributor.authorRubio-Zuazo, J.-
dc.contributor.authorRomero-Gómez, Pablo-
dc.contributor.authorLópez-Santos, Carmen-
dc.contributor.authorYubero, Francisco-
dc.date.accessioned2013-04-19T08:44:16Z-
dc.date.available2013-04-19T08:44:16Z-
dc.date.issued2012-
dc.identifierdoi: 10.1016/j.susc.2012.01.017-
dc.identifierissn: 0039-6028-
dc.identifier.citationSurface Science 606(9-10): 820-824 (2012)-
dc.identifier.urihttp://hdl.handle.net/10261/74648-
dc.descriptionEl pdf del artículo es la versión post-print.-
dc.description.abstractWe have experimentally evaluated attenuation lengths (AL) of photoelectrons traveling in compact and micro and mesoporous (∼ 45% voids) SiO 2 thin films with high (8.2-13.2 keV) kinetic energies. The films were grown on polished Si(100) wafers. ALs were deduced from the intensity ratio of the Si 1s signal from the SiO 2 film and Si substrate using the two-peaks overlayer method. We obtain ALs of 15-22 nm and 23-32 nm for the compact and porous SiO 2 films for the range of kinetic energies considered. The observed AL values follow a power law dependence on the kinetic energy of the electrons where the exponent takes the values 0.81 ± 0.13 and 0.72 ± 0.12 for compact and porous materials, respectively. © 2012 Elsevier B.V. All rights reserved.-
dc.description.sponsorshipWe thank the Spanish MICINN (projects MAT2010-18447 and Consolider CSD2008-00023 and CPAN CSD2007-42) for financial support.-
dc.language.isoeng-
dc.publisherElsevier-
dc.relation.isversionofPostprint-
dc.rightsopenAccess-
dc.titleAttenuation lengths of high energy photoelectrons in compact and mesoporous SiO2 films-
dc.typeArtículo-
dc.identifier.doi10.1016/j.susc.2012.01.017-
dc.relation.publisherversionhttp://dx.doi.org/10.1016/j.susc.2012.01.017-
dc.date.updated2013-04-19T08:44:16Z-
dc.description.versionPeer Reviewed-
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