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Título : Cross gain modulation in broad area vertical cavity semiconductor amplifier
Autor : Marino, Francesco, Furfaro, Luca, Balle, Salvador
Palabras clave : Semiconductor optical amplifiers
Optical wavelength conversion
Optical modulation
Fecha de publicación : 8-Apr-2005
Editor: American Institute of Physics
Citación : Applied Physics Letters 86, 151116 (2005)
Resumen: We demonstrate that broad-area vertical-cavity semiconductor optical amplifiers allow for wavelength conversion at 2.5 Gb/s via cross-gain modulation sXGMd. XGM is reached with a saturation beam of only 1.5 mW over an optical bandwidth of 0.7 nm s215 GHzd. Depending on the wavelengths of the injected fields, inverted or noninverted output can be obtained.
Descripción : 3 pages.-- PACS nrs.: 42.55.Px, 42.65.Ky, 42.60.Fc.
Versión del editor:
ISSN: 0003-6951
DOI: 10.1063/1.1905811
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