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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/7449
Title: Cross gain modulation in broad area vertical cavity semiconductor amplifier
Authors: Marino, Francesco; Furfaro, Luca; Balle, Salvador
Keywords: Semiconductor optical amplifiers
Optical wavelength conversion
Optical modulation
Issue Date: 8-Apr-2005
Publisher: American Institute of Physics
Citation: Applied Physics Letters 86, 151116 (2005)
Abstract: We demonstrate that broad-area vertical-cavity semiconductor optical amplifiers allow for wavelength conversion at 2.5 Gb/s via cross-gain modulation sXGMd. XGM is reached with a saturation beam of only 1.5 mW over an optical bandwidth of 0.7 nm s215 GHzd. Depending on the wavelengths of the injected fields, inverted or noninverted output can be obtained.
Description: 3 pages.-- PACS nrs.: 42.55.Px, 42.65.Ky, 42.60.Fc.
Publisher version (URL): http://dx.doi.org/10.1063/1.1905811
URI: http://hdl.handle.net/10261/7449
DOI: 10.1063/1.1905811
ISSN: 0003-6951
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