Cross gain modulation in broad area vertical cavity semiconductor amplifier

English español

Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/7449

Share/Impact:

Statistics	SHARE CORE Mendeley BASE	Share your Open Access Story
	Cited 13 times in Web of Knowledge® Cited 12 times in Scopus® See citations in Google Scholar
	Visualizar otros formatos: MARC \| Dublin Core \| RDF \| ORE \| MODS \| METS \| DIDL
	Exportar a otros formatos:

Title:	Cross gain modulation in broad area vertical cavity semiconductor amplifier
Authors:	Marino, Francesco; Furfaro, Luca; Balle, Salvador
Keywords:	Semiconductor optical amplifiers Optical wavelength conversion Amplification Optical modulation
Issue Date:	8-Apr-2005
Publisher:	American Institute of Physics
Citation:	Applied Physics Letters 86, 151116 (2005)
Abstract:	We demonstrate that broad-area vertical-cavity semiconductor optical amplifiers allow for wavelength conversion at 2.5 Gb/s via cross-gain modulation sXGMd. XGM is reached with a saturation beam of only 1.5 mW over an optical bandwidth of 0.7 nm s215 GHzd. Depending on the wavelengths of the injected fields, inverted or noninverted output can be obtained.
Description:	3 pages.-- PACS nrs.: 42.55.Px, 42.65.Ky, 42.60.Fc.
Publisher version (URL):	http://dx.doi.org/10.1063/1.1905811
URI:	http://hdl.handle.net/10261/7449
DOI:	10.1063/1.1905811
ISSN:	0003-6951
Appears in Collections:	(IMEDEA) Artículos (IFISC) Artículos

File	Description	Size	Format
ApplPhysLett_86_151116.pdf		56,52 kB	Adobe PDF	View/Open