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Título: | Relevance and formation mechanisms of negative ions upon ablation of Al 2O 3 |
Autor: | Peláez, Ramón J. CSIC ORCID; Afonso, Carmen N. CSIC ; Chen, J.; Espósito, Massimiliano; Lippert, T.; Stender, D.; Wokaun, A. | Fecha de publicación: | 2012 | Editor: | Institute of Physics Publishing | Citación: | Journal of Physics D - Applied Physics 45: 285402 (2012) | Resumen: | The aim of this work is to study the significance of negative ions in the plasma produced by ablation of a simple oxide ceramic target (Al 2O 3) at distances and fluences typically used in pulsed-laser deposition processes. The results show that negative ions are indeed produced, the majority of which (>82%) being O that are predominantly produced by neutralization of O + followed by electron attachment. They represent one third of the O + population at low fluences for a distance of 4cm from the target at which most deposition experiments are performed. AlO represents up to 15% of the negative ions and their amount increases at the expense of O as fluence is increased. The most abundant as well as the fastest species in the plasma is by far Al + that represent >80% of ions having kinetic energy <100eV at low fluences. This result is consistent with earlier discussion on the possible existence of direct photoionization processes due to the high (6.4eV) photon energy. Saturation effects, the formation mechanism for AlO and Al 2+, and expansion dynamics for negative ions are finally discussed. © 2012 IOP Publishing Ltd. | URI: | http://hdl.handle.net/10261/73593 | DOI: | 10.1088/0022-3727/45/28/285402 | Identificadores: | doi: 10.1088/0022-3727/45/28/285402 issn: 0022-3727 |
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