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Título: | Incorporation and optical activation of erbium in silicon using molecular beam epitaxy |
Autor: | Serna, Rosalía CSIC ORCID ; Shin, J. H.; Lohmeier, M.; Vlieg, E.; Polman, A.; Alkemade, P.F.A. | Fecha de publicación: | 1996 | Editor: | American Institute of Physics | Citación: | Journal of Applied Physics 79: 2658-2662 (1996) | Resumen: | Erbium is incorporated in crystalline silicon during molecular beam epitaxy on Si(100) at 600°C, either in vacuum (6×10-11 mbar) or in an O2 ambient (4×10-10 mbar). Strong Er segregation takes place during growth in vacuum, and only 23% of the total deposited Er is incorporated in the epitaxial layer Films grown in an O2 ambient show no Er segregation, and an Er concentration of 1.5×1019 Er/cm3 is incorporated in the crystal. The O content is 4×1019 O/cm3. Photoluminescence spectra taken at 10 K show the characteristic intra-4f luminescence of Er3+ at 1.54 μm for both samples, grown with and without O2. Differences found in the spectral shape indicate a difference in the local environment (presumably O coordination) of Er for the two cases. The O codoped film shows a 7 times higher Er luminescence peak intensity than the film grown without O. This is due to the higher incorporated Er concentration as well as an increased luminescence efficiency (lifetime without O: 0.33 ms, with O: 1.81 ms). The Er excitation efficiency is lower in the O codoped film than in the O-undoped film, which is attributed to the lower minority carrier lifetime in the O-doped material Thermal annealing of the O codoped film at 1000°C increases the excitation efficiency and hence the Er luminescence intensity. © 1996 American Institute of Physics. | URI: | http://hdl.handle.net/10261/64561 | DOI: | 10.1063/1.361136 | Identificadores: | doi: 10.1063/1.361136 issn: 0021-8979 |
Aparece en las colecciones: | (CFMAC-IO) Artículos |
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