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dc.contributor.authorSiegel, Jan-
dc.contributor.authorGawelda, W.-
dc.contributor.authorPuerto, D.-
dc.contributor.authorDorronsoro, Carlos-
dc.contributor.authorSolís Céspedes, Javier-
dc.contributor.authorAfonso, Carmen N.-
dc.contributor.authorSande, J. C. G. de-
dc.contributor.authorBez, R.-
dc.contributor.authorPirovano, A.-
dc.contributor.authorWiemer, C.-
dc.identifierdoi: 10.1063/1.2836788-
dc.identifierissn: 0021-8979-
dc.identifier.citationJournal of Applied Physics 103: 023516 (2008)-
dc.description.abstractPhase transformations of crystalline Ge2 Sb2 Te5 films upon pulsed laser irradiation have been studied using in situ reflectivity measurements with temporal resolution. Two different configurations allowed point probing with nanosecond temporal resolution and imaging with subpicosecond temporal and micrometer spatial resolution. The role of the pulse duration and laser fluence on the dynamics of the phase change and the degree of amorphization is discussed. Several advantageous features of femtosecond compared to nanosecond laser-induced amorphization are identified. Moreover, a high-resolution study of the amorphization dynamics reveals the onset of amorphization at moderate fluences to occur within ∼100 ps after arrival of the laser pulse. At high fluences, amorphization occurs after ∼430 ps and the molten phase is characterized by an anomalously low reflectivity value, indicative of a state of extreme supercooling. © 2008 American Institute of Physics.-
dc.publisherAmerican Institute of Physics-
dc.titleAmorphization dynamics of Ge2 Sb2 Te5 films upon nano- and femtosecond laser pulse irradiation-
dc.description.versionPeer Reviewed-
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