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Ion-sensitive field-effect transistors fabricated in a commercial CMOS technology

AuthorsBausells, Joan ; Carrabina, J.; Errachid, Abdelhamid; Merlos, A.
CMOS sensors
Issue Date1999
CitationSensors and Actuators - B - Chemical Biochemical Sensors, vol. 57, pp. 56-62
AbstractThe fabrication of pH-sensitive ISFET devices in an unmodified two-metal commercial CMOS technology (1.0 um from Atmel-ES2) is reported. The ISFET devices have a gate structure compatible with the CMOS process, with an electrically floating electrode consisting on polysilicon plus the two metals. The passivation oxynitride layer acts as the pH-sensitive material in contact with the liquid solution. The devices have shown good operating characteristics, with a 47 mV/pH response. The use of a commercial CMOS process allows the straightforward integration of signal-processing circuitry. An ISFET amplifier circuit has been integrated with the ISFET sensors.
Publisher version (URL)http://dx.doi.org/10.1016/S0925-4005(99)00135-5
Appears in Collections:(IMB-CNM) Artículos
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