Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/61632
Título : Effect of crystallographic structure on electrical and mechanical characteristics of Sm2O3-Doped CeO2 films
Autor : Hartmanová, M., Navrátil, V., Buršíková, V., Kundracik, F., Mansilla, C.
Palabras clave : CeO2
Sm2O3
e-beam evaporation
ionic beam assisted deposition
impedance spectroscopy
indentation technique
electrical conductivity
dielectric permittivity
microhardness
Fecha de publicación : 1-May-2011
Editor: MAIK Nauka/Interperiodica Publishing
Citación : Russian Journal of Electrochemistry 47 (5): 505-516 (2011)
Resumen: Electrical conductivity, dielectric permittivity and mechanical hardness of the polycrystalline CeO2 + xSm2O3 (x = 0, 10.9–15.9 mol %) films prepared by Electron Beam Physical Vapour Deposition (EB-PVD) and Ionic Beam Assisted Deposition, (IBAD), techniques were investigated in dependence on their structure and microstructure influenced by the deposition conditions, namely composition, deposition temperature and Ar+ ion bombardment. The electrical conductivity of doped ceria prepared without Ar+ ion bombardment and investigated by the impedance spectroscopy, IS, was found to be predominantly ionic one under the oxidizing atmosphere/low-temperature conditions and the higher amounts of Sm2O3 (>10 mol %) used. The bulk conductivity as a part of total measured conductivity was a subject of interest because the grain boundary conductivity was found to be ∼3 orders of magnitude lower than the corresponding bulk conductivity. Ar+ ion bombardment acted as a reducer (Ce4+ → Ce3+) resulting in the development of electronic conductivity. Dielectric permittivity determined from the bulk parallel capacitance measured at room temperature and the frequency of 1 MHz, similarly as the mechanical hardness measured by indentation (classical Vickers and Depth Sensing Indentation-DSI) techniques were also found to be dependent on the deposition conditions. The approximative value of hardness for the investigated films deposited on the substrate was estimated using a simple phenomenological model described by the power function HV = HV 0 + aP b and compared with the so-called apparent hardness (substrate + investigated film) determined by the classical Vickers formula. Results obtained are analyzed and discussed.
Descripción : 12 pages
Versión del editor: http://dx.doi.org/10.1134/S1023193511050041
URI : http://hdl.handle.net/10261/61632
ISSN: 1023-1935
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