English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/6040
logo share SHARE   Add this article to your Mendeley library MendeleyBASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


Correlations in semiconductor ring lasers in the bidirectional regime

AuthorsPérez Serrano, Antonio
AdvisorScirè, Alessandro
KeywordsLaser dynamics
Semiconductor ring lasers
Issue Date19-Jul-2007
PublisherUniversidad de las Islas Baleares
AbstractWe study the influence of spontaneous emission noise in a two-mode model for semiconductor ring lasers, biased in the bidirectional static emission regime. The analysis is carried out by linearizing the model close to a stable stationary solution, and considering effect of noise as stochastic perturbations expressed by Langevin forces. At a linear level, pertubations concerning the total intensity and carrier inversion dynamics decouple from the energy distribution processes between the two modes. This fact permits a full analytic analysis, well confirmed by numerical simulations of the complete non linear system. The analysis shows that semiconductor ring lasers have peculiar noise properties. On one side the total intensity and carrier density show a noise spectrum characterized by a resonance induced by the typical field-medium exchange processes (relaxation oscillations) and the global phase invariance induced by the Goldstone mode, so as far as those variables are concerned, it behaves as a standard single-mode Fabry-Perot semiconductor laser. Besides, the degree of freedom associated to the simultaneous presence of two counterpropagating modes allows for a further process of energy exchange between the two modes. Our analysis unveils that such process presents a resonance peak as well, influenced mainly by the backscattering parameters, and can be excited in the bidirectional regime as a ’noisy precursor’ of a Hopf bifurcation.
The present work represents the development of reliable tools for the simulation and analytical analysis of a model for semiconductor ring lasers. Reliability is tested by a thoughout comparison between simulation and calculations. Future developments will range from quantitative evaluation of two-times correlations functions, to applications to rotation sensing, to analysis of the stochastic jumps induced by noise in the bistable regime.
DescriptionMemoria de Master en Física de la Universidad de las Islas Baleares, Facultad de Física y del Instituto de Física Interdisciplinar y Sistemas Complejos (IFISC-CSIC/UIB).-- Texto en inglés, prefacio en castellano.-- Fecha de lectura: 19-07-2007.
Appears in Collections:(IFISC) Tesis
Files in This Item:
File Description SizeFormat 
memoria.pdf1,81 MBAdobe PDFThumbnail
Show full item record
Review this work

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.