Crystallization kinetics of SbxSe100-x thin films

Abstract

The crystallization kinetics in SbxSe100-x films with 39≤x≤58 is studied by monitoring the optical transmission of the films during both isothermal and constant rate heatings. The structure of the films upon crystallization and at certain intermediate stages is studied by electron microscopy techniques. The results are analyzed in the frame of the Johnson-Mehl-Avrami theory in order to determine the kinetic parameters (Avrami exponent, activation energy and frequency factor) in addition to the crystallization temperature. The results show that film crystallization is always preceeded by a relaxation process which modifies substantially the optical properties of the amorphous material. Amorphous films with compositions close to the stoichiometric compound (Sb2Se3) are found to show the highest activation energy for crystallization.