Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/57776
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Título : Solidification phenomena in Ge films upon nano- and pico-second laser pulse melting
Autor : Afonso, Carmen N., Solís Céspedes, Javier, Vega, F., Siegel, Jan, Szyszko, W.
Fecha de publicación : 1997
Editor: Elsevier
Citación : Applied Surface Science 109-110: 20- 24 (1997)
Resumen: Melting has been induced in amorphous Ge films upon irradiation with both nano- and pico-second laser pulses. The role of undercooling and heat flow in the subsequent rapid solidification process has been investigated by analyzing the behavior of films with different thicknesses (30-180 nm) grown on Si(100) substrates by means of real time reflectivity measurements in the ns timescale. Recalescence is observed in films with a thickness above a threshold value which depends on the pulse duration. An additional solidification scenario, i.e. surface initiated solidification, is observed upon ps pulse irradiation in films with intermediate thicknesses.
URI : http://hdl.handle.net/10261/57776
Identificadores: doi: 10.1016/S0169-4332(96)00614-9
issn: 0169-4332
DOI: 10.1016/S0169-4332(96)00614-9
Citación : Applied Surface Science 109-110: 20- 24 (1997)
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