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Closed Access item Solidification phenomena in Ge films upon nano- and pico-second laser pulse melting

Authors:Afonso, Carmen N.
Solís Céspedes, Javier
Vega, F.
Siegel, Jan
Szyszko, W.
Issue Date:1997
Citation:Applied Surface Science 109-110: 20- 24 (1997)
Abstract:Melting has been induced in amorphous Ge films upon irradiation with both nano- and pico-second laser pulses. The role of undercooling and heat flow in the subsequent rapid solidification process has been investigated by analyzing the behavior of films with different thicknesses (30-180 nm) grown on Si(100) substrates by means of real time reflectivity measurements in the ns timescale. Recalescence is observed in films with a thickness above a threshold value which depends on the pulse duration. An additional solidification scenario, i.e. surface initiated solidification, is observed upon ps pulse irradiation in films with intermediate thicknesses.
Identifiers:doi: 10.1016/S0169-4332(96)00614-9
issn: 0169-4332
Appears in Collections:(CFMAC) Artículos

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