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dc.contributor.authorAtanasov, P. A.-
dc.contributor.authorPerea, Ángel-
dc.contributor.authorCastro, M. J. de-
dc.contributor.authorChaos, J. A.-
dc.contributor.authorGonzalo de los Reyes, José-
dc.contributor.authorAfonso, Carmen N.-
dc.contributor.authorPerriére, J.-
dc.date.accessioned2012-09-25T14:48:07Z-
dc.date.available2012-09-25T14:48:07Z-
dc.date.issued2002-
dc.identifierdoi: 10.1007/s003390100975-
dc.identifierissn: 0947-8396-
dc.identifier.citationApplied Physics A: Materials Science and Processing 74: 109- 113 (2002)-
dc.identifier.urihttp://hdl.handle.net/10261/56738-
dc.description.abstractOptically active thin films on Si substrates have been produced by laser ablation of a Nd-doped potassium gadolinium tungstate (Nd:KGW) single crystal. Films grown at low oxygen pressures (< 0.6 mbar) are potassium-deficient and appear to be mainly disordered. They show a poor photoluminescence (PL) performance that improves upon annealing in air at temperatures in the range 700-1000 °C. Films grown at high oxygen pressure (1 mbar) show instead good stoichiometry and the presence of a dominant textured gadolinium-tungstate phase compared to KGW. These films have low absorption, a refractive index close to that of bulk KGW and good PL performance, the emission lifetimes being longer (τ > 150 μs) under certain conditions than those measured in the single-crystal material. © Springer-Verlag 2001.-
dc.description.sponsorshipThis research was partially supported by CYCIT (Spain) under Project No. TIC1999-0866.-
dc.language.isoeng-
dc.publisherSpringer-
dc.rightsclosedAccess-
dc.titleLuminescence properties of thin films prepared by laser ablation of Nd-doped potassium gadolinium tungstate-
dc.typeartículo-
dc.identifier.doi10.1007/s003390100975-
dc.date.updated2012-09-25T14:48:07Z-
dc.description.versionPeer Reviewed-
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