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|Title:||Luminescence properties of thin films prepared by laser ablation of Nd-doped potassium gadolinium tungstate|
|Authors:||Atanasov, P. A.; Perea, Ángel; Castro, M. J. de; Chaos, J. A.; Gonzalo de los Reyes, José; Afonso, Carmen N.; Perriére, J.|
|Citation:||Applied Physics A: Materials Science and Processing 74: 109- 113 (2002)|
|Abstract:||Optically active thin films on Si substrates have been produced by laser ablation of a Nd-doped potassium gadolinium tungstate (Nd:KGW) single crystal. Films grown at low oxygen pressures (< 0.6 mbar) are potassium-deficient and appear to be mainly disordered. They show a poor photoluminescence (PL) performance that improves upon annealing in air at temperatures in the range 700-1000 °C. Films grown at high oxygen pressure (1 mbar) show instead good stoichiometry and the presence of a dominant textured gadolinium-tungstate phase compared to KGW. These films have low absorption, a refractive index close to that of bulk KGW and good PL performance, the emission lifetimes being longer (τ > 150 μs) under certain conditions than those measured in the single-crystal material. © Springer-Verlag 2001.|
|Appears in Collections:||(CFMAC-IO) Artículos|
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