Kinetics of laser-induced surface melting and oxide removal in single-crystalline Ge

Abstract

The process of oxide removal in crystalline Ge using a pulsed ultraviolet laser has been studied by means of real-time reflectivity measurements with nanosecond resolution. The interaction of laser radiation with a clean, oxide-free surface has been characterized and the inhomogeneous and homogeneous energy density melting thresholds of c-Ge for 193 nm radiation have been determined. The values are 180 and 370 mJ/cm2, respectively. We have demonstrated that it is possible to remove an oxide overlayer by irradiation in vacuum and to produce a surface that shows the same response to laser radiation as a smooth, oxide-free, chemically cleaned surface. Under certain specific irradiation conditions it is even possible, after removing the oxide overlayer, to produce an enhanced crystalline quality in the near-surface region compared to that obtained upon chemical cleaning as evidenced by Rutherford backscattering/channeling measurements.