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Título: | All-optical characterization of single femtosecond laser-pulse-induced amorphization in silicon |
Autor: | Bonse, J. CSIC ORCID | Fecha de publicación: | 2006 | Editor: | Springer Nature | Citación: | Applied Physics A: Materials Science and Processing 84: 63- 66 (2006) | Resumen: | The non-destructive optical imaging method of scanning laser microscopy has been used to evaluate quantitatively the thickness of an amorphous layer induced by a single, spatially Gaussian-shaped 130-fs Ti:sapphire laser pulse on n-doped single-crystalline 〈111〉-silicon wafers for laser fluences between melting and ablation threshold. A parabolic thickness profile exhibiting a maximum value of approximately 60 nm has been found for fluences of 80% of the ablation threshold value by means of scanning laser microscopy in combination with a thin film optical model. This suggests that the melt and the amorphous layer thickness are linearly related to each other. | URI: | http://hdl.handle.net/10261/56655 | DOI: | 10.1007/s00339-006-3583-3 | Identificadores: | doi: 10.1007/s00339-006-3583-3 issn: 0947-8396 |
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