Por favor, use este identificador para citar o enlazar a este item:
http://hdl.handle.net/10261/56408
COMPARTIR / EXPORTAR:
SHARE BASE | |
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE | |
Título: | NH_3 Molecular Doping of Silicon Nanowires grown along the [112], [110], [001] and [111] orientations |
Autor: | Miranda, Álvaro; Cartoixà, Xavier; Canadell, Enric CSIC ORCID; Rurali, Riccardo CSIC ORCID | Fecha de publicación: | 18-jun-2012 | Editor: | BioMed Central | Citación: | Nanoscale Research Letters. 18;7(1):308 (2012 ) | Resumen: | AbstractThe possibility that an adsorbed molecule could provide shallow electronic states that could be thermally excited has received less attention than substitutional impurities and could potentially have a high impact in the doping of silicon nanowires (SiNWs). We show that molecular-based ex-situ doping, where NH3 is adsorbed at the sidewall of the SiNW, can be an alternative path to n-type doping. By means of first-principle electronic structure calculations, we show that NH3 is a shallow donor regardless of the growth orientation of the SiNWs. Also, we discuss quantum confinement and its relation with the depth of the NH3 doping state, showing that the widening of the bandgap makes the molecular donor level deeper, thus more difficult to activate. | URI: | http://hdl.handle.net/10261/56408 | Identificadores: | http://dx.doi.org/10.1186/1556-276X-7-308 |
Aparece en las colecciones: | (ICMAB) Artículos |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
---|---|---|---|---|
1556-276X-7-308.xml | 42,96 kB | XML | Visualizar/Abrir | |
1556-276X-7-308.pdf | 4,51 MB | Adobe PDF | Visualizar/Abrir |
CORE Recommender
Page view(s)
273
checked on 18-mar-2024
Download(s)
407
checked on 18-mar-2024
Google ScholarTM
Check
NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.