Please use this identifier to cite or link to this item:
Título : Combined effects of semiconductor gain dynamics, spin dynamics and thermal shift in polarization selection in VCSELs
Autor : San Miguel, Maxi, Balle, Salvador, Mulet, Josep, Mirasso, Claudio R., Tolkachova, E., Tredicce, Jorge R.
Fecha de publicación : 14-Jul-2000
Editor: Society of Photo-Optical Instrumentation Engineers
Citación : SPIE Proceedings
Resumen: We discuss mechanisms of polarization switching (PS) in Vertical Cavity Surface Emitting Lasers (VCSELs) within a mesoscopic approach based on an explicit form of a frequency- dependent complex susceptibility of the QW semi-conductor material. Cavity anisotropies, spin carrier dynamics and thermal shift of the gain curve are also taken into account in this framework. For large birefringence we find a PS due to thermal shift. For small birefringence we find a different PS, from the high-gain to the low-gain polarization state, that occurs at constant temperature. We characterize polarization partition noise in terms of power spectra. Transverse effects for PS in gain guided VCSELs are also considered.
Versión del editor:
DOI: 10.1117/12.391426
Citación : Physics and Simulation of Optoelectronic Devices VIII: 3944, 242-251 (2000)
Appears in Collections:(IMEDEA) Libros y partes de libros

Files in This Item:
File Description SizeFormat 
Combined effects of semiconductor gain dynamics.pdf731,57 kBAdobe PDFView/Open
Show full item record

Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.