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Dynamics of ultrafast phase changes in amorphous GeSb films

AuthorsSokolowski Tinten, K.; Solís Céspedes, Javier ; Bialkowski, J.; Siegel, Jan ; Afonso, Carmen N. ; Von Der Linde, D.
Issue Date1998
PublisherAmerican Physical Society
CitationPhysical Review Letters 81(17): 3679- 3682 (1998)
AbstractTime resolved imaging has been used to analyze structural transformations induced by intense 100 fs laser pulses in amorphous GeSb films. Above a threshold of 19 mJ/cm2 the data show the formation of a transient nonequilibrium state of the excited material within 300 fs. The results are consistent with an electronically induced, amorphous-to-crystalline phase transition.
Identifiersdoi: 10.1103/PhysRevLett.81.3679
issn: 0031-9007
Appears in Collections:(CFMAC-IO) Artículos
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