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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/52797
Title: Growth and characterization of InSb/InP short-period strained-layer superlattices grown by ALMBE
Authors: Utzmeier, T.; Armelles Reig, Gaspar ; Postigo, Pablo Aitor ; Briones Fernández-Pola, Fernando
Issue Date: 1996
Publisher: Pergamon Press
Citation: Solid-State Electronics 40: 621-626 (1996)
Abstract: We report for the first time the successful growth of short period strained-layer superlattices of InSb/InP by atomic layer molecular beam epitaxy. This sample combination is especially interesting because the equivalent ternary alloy has a very wide miscibility gap in which it cannot be grown. The samples were characterized by reflection high-energy electron diffraction, X-ray diffraction, Hall measurements and Raman spectroscopy. The X-ray measurements show clearly satellite peaks that indicate the formation of the superlattice. Raman spectra show the confined phonon peaks of InSb (194 cm-1) and InP (300 cm-1), respectively. Exciting in resonance with the E1 transition of the SPSL the peaks corresponding to the LO1 and LO2 phonons are clearly identified.
URI: http://hdl.handle.net/10261/52797
DOI: 10.1016/0038-1101(95)00375-4
Identifiers: doi: 10.1016/0038-1101(95)00375-4
issn: 0038-1101
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