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Título: | Strain induced lateral ordering in Ga0.22In0.78As/Ga0.22In0.78P short period superlattices on (001) InP |
Autor: | Dotor-Castilla, María Luisa CSIC ORCID; Quintana Rodríguez, Carmen CSIC ORCID; Golmayo, Dolores CSIC | Fecha de publicación: | 2001 | Editor: | Springer Nature | Citación: | Journal of Electronic Materials 30: 895-899 (2001) | Resumen: | The application of the strain induced lateral ordering process to the strain-compensated (Ga0.22In0.78As)m(Ga0.22 In0.78P)m short period superlattices is investigated. The superlattices have been grown at low temperatures by solid source molecular beam epitaxy (MBE) on (001) InP. These superlattices have been used in multiquantum well heterostructures using InP as barriers. The anisotropic polarization of photoluminescence shows the existence of lateral modulation. Dark-field images using the 220 reflection gives modulated contrast in the superlattice layers. High-resolution transmission electron microscopy shows local variations of the interplanar spacing of the (200) planes as well as the angles they form with the (002) planes. | URI: | http://hdl.handle.net/10261/52378 | DOI: | 10.1007/s11664-001-0078-z | Identificadores: | doi: 10.1007/s11664-001-0078-z issn: 0361-5235 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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accesoRestringido.pdf | 15,38 kB | Adobe PDF | Visualizar/Abrir |
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