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Closed Access item High-resolution electron microscopy and X-ray diffraction characterization of alternately strained (GaAs)n(GaP)m(GaAs)n(InP)m superlattices grown by Atomic Layer Molecular Beam Epitaxy.

Authors:Ballesteros, C.
Gerthsen, D.
Mazuelas, A.
Ruiz, A.
Briones Fernández-Pola, Fernando
Issue Date:1994
Publisher:Taylor & Francis
Citation:Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties 69: 871-880 (1994)
Abstract:Alternately-strained-layer of (GaAs)n(GaP)m(GaAs)n(InP)m, superlattices with n = 10, 90 and m = 2 monolayers, have been characterized by X-ray diffraction and high-resolution transmission electron microscopy. The heterostructures were grown by atomic layer molecular beam epitaxy on GaAs semi-insulating substrates at a substrate temperature of 710K. All the structures were coherent with the substrate and there is an effective compensation of the strains due to GaP and InP layers. X-ray diffraction and high-resolution electron microscopy analysis indicate a high crystalline quality with layers thickness deviations of ± 1 monolayer from the designed value.
Identifiers:issn: 0141-8610
Appears in Collections:(IMM-CNM) Artículos

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