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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/52251
Title: High-resolution electron microscopy and X-ray diffraction characterization of alternately strained (GaAs)n(GaP)m(GaAs)n(InP)m superlattices grown by Atomic Layer Molecular Beam Epitaxy.
Authors: Ballesteros, Carmen; Gerthsen, D.; Mazuelas Esteban, Ángel José ; Ruiz, A.; Briones Fernández-Pola, Fernando
Issue Date: 1994
Publisher: Taylor & Francis
Citation: Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties 69: 871-880 (1994)
Abstract: Alternately-strained-layer of (GaAs)n(GaP)m(GaAs)n(InP)m, superlattices with n = 10, 90 and m = 2 monolayers, have been characterized by X-ray diffraction and high-resolution transmission electron microscopy. The heterostructures were grown by atomic layer molecular beam epitaxy on GaAs semi-insulating substrates at a substrate temperature of 710K. All the structures were coherent with the substrate and there is an effective compensation of the strains due to GaP and InP layers. X-ray diffraction and high-resolution electron microscopy analysis indicate a high crystalline quality with layers thickness deviations of ± 1 monolayer from the designed value.
URI: http://hdl.handle.net/10261/52251
Identifiers: issn: 0141-8610
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