Digital.CSIC > Ciencia y Tecnologías Físicas > Instituto de Microelectrónica de Madrid (IMM-CNM) > (IMM-CNM) Artículos >

Closed Access item Growth and characterization of AlAs/InAs superlattices on {100}, {211} and {311} GaAs substrates

Authors:Castrillo, P.
Armelles Reig, Gaspar
Domínguez, P. S.
Meléndez, J.
Briones Fernández-Pola, Fernando
Ploog, K.
Issue Date:1992
Citation:Surface Science 267: 413-417 (1992)
Abstract:AlAs/InAs strained layer superlattices have been grown pseudomorphically on {100}, {311} and {211} GaAs substrates by atomic layer molecular beam epitaxy. Optical characterization has been performed by piezoreflectance and Raman spectroscopies. A two coupled modes linear chain model has been developed for {ξ11} (ξ = 2.3) superlattices phonon modes calculation taking into account the effect of strain. Phonon modes calculations for the {311} AlAs/InAs superlattice are in very good agreement with the experimental Raman results. © 1992.
Identifiers:issn: 0039-6028
Appears in Collections:(IMM-CNM) Artículos

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.