Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/52233
Título : Growth and characterization of AlAs/InAs superlattices on {100}, {211} and {311} GaAs substrates
Autor : Castrillo, Pedro, Armelles Reig, Gaspar, Domínguez, P. S., Meléndez Sánchez, Juan, Briones Fernández-Pola, Fernando, Ploog, K.
Fecha de publicación : 1992
Editor: Elsevier
Citación : Surface Science 267: 413-417 (1992)
Resumen: AlAs/InAs strained layer superlattices have been grown pseudomorphically on {100}, {311} and {211} GaAs substrates by atomic layer molecular beam epitaxy. Optical characterization has been performed by piezoreflectance and Raman spectroscopies. A two coupled modes linear chain model has been developed for {ξ11} (ξ = 2.3) superlattices phonon modes calculation taking into account the effect of strain. Phonon modes calculations for the {311} AlAs/InAs superlattice are in very good agreement with the experimental Raman results. © 1992.
URI : http://hdl.handle.net/10261/52233
Identificadores: issn: 0039-6028
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