Ga0.47In0.53As multiquantum well heterostructures, confined by pseudoquaternary (InP)n/(Ga0.47In 0.53As)m short period superlattices lattice-matched to InP

Abstract

(InP)n/(Ga0.47In0.53As)m lattice-matched short-period superlattices have been used as pseudoquaternary material to confine Ga0.47In0.53As multiquantum wells in a GaxIn1-xAs/GaxIn1-xAs yP1-y/InP heterostructure. The samples have been grown by low-temperature atomic layer molecular beam epitaxy, using fast operating valved solid sources to generate P2 and As4 beams. X-ray diffraction was used to assess the structural quality of the samples. The effect of the superlattice period on the pseudoquaternary band gap is reported. Room-temperature photoluminescence wavelength of the multiquantum well structure is close to 1.55 μm. Growing short-period superlattices results in a much easier method to control band-gap energy than growing alternative quaternary material.