English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/52228
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Ga0.47In0.53As multiquantum well heterostructures, confined by pseudoquaternary (InP)n/(Ga0.47In 0.53As)m short period superlattices lattice-matched to InP

AuthorsDotor, María Luisa ; Huertas, P.; Golmayo, Dolores ; Briones Fernández-Pola, Fernando
Issue Date1993
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 62: 891-893 (1993)
Abstract(InP)n/(Ga0.47In0.53As)m lattice-matched short-period superlattices have been used as pseudoquaternary material to confine Ga0.47In0.53As multiquantum wells in a GaxIn1-xAs/GaxIn1-xAs yP1-y/InP heterostructure. The samples have been grown by low-temperature atomic layer molecular beam epitaxy, using fast operating valved solid sources to generate P2 and As4 beams. X-ray diffraction was used to assess the structural quality of the samples. The effect of the superlattice period on the pseudoquaternary band gap is reported. Room-temperature photoluminescence wavelength of the multiquantum well structure is close to 1.55 μm. Growing short-period superlattices results in a much easier method to control band-gap energy than growing alternative quaternary material.
Identifiersdoi: 10.1063/1.108557
issn: 0003-6951
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
accesoRestringido.pdf15,38 kBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.