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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/52228
Title: Ga0.47In0.53As multiquantum well heterostructures, confined by pseudoquaternary (InP)n/(Ga0.47In 0.53As)m short period superlattices lattice-matched to InP
Authors: Dotor, María Luisa; Huertas, P.; Golmayo, Dolores; Briones Fernández-Pola, Fernando
Issue Date: 1993
Publisher: American Institute of Physics
Citation: Applied Physics Letters 62: 891-893 (1993)
Abstract: (InP)n/(Ga0.47In0.53As)m lattice-matched short-period superlattices have been used as pseudoquaternary material to confine Ga0.47In0.53As multiquantum wells in a GaxIn1-xAs/GaxIn1-xAs yP1-y/InP heterostructure. The samples have been grown by low-temperature atomic layer molecular beam epitaxy, using fast operating valved solid sources to generate P2 and As4 beams. X-ray diffraction was used to assess the structural quality of the samples. The effect of the superlattice period on the pseudoquaternary band gap is reported. Room-temperature photoluminescence wavelength of the multiquantum well structure is close to 1.55 μm. Growing short-period superlattices results in a much easier method to control band-gap energy than growing alternative quaternary material.
URI: http://hdl.handle.net/10261/52228
Identifiers: doi: 10.1063/1.108557
issn: 0003-6951
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