English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/52147
logo share SHARE   Add this article to your Mendeley library MendeleyBASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Effect of phosphorus on electrical properties of undoped InP grown at low temperature by atomic layer molecular beam epitaxy

AuthorsPostigo, Pablo Aitor ; García-Pérez, Fernando ; Dotor, María Luisa ; Golmayo, Dolores ; Briones Fernández-Pola, Fernando
Issue Date1996
PublisherW.S. Maney & Son
CitationMaterials Science and Technology 12: 187-189 (1996)
AbstractUndoped InP layers grown at low temperature by atomic layer molecular beam epitaxy have been studied by Hall measurements and deep level transient spectroscopy. The free carrier concentration at room temperature increases linearly with phosphorus pressure and it has been possible to obtain layers with a free carrier concentration of 1 × 1016 cm-3 and an electron mobility of about 3000 cm2 V-1 s-1, which are similar to values for samples grown at high temperatures. Deep level transient spectroscopy shows the presence, in all the samples, of five electron traps with emission energies of 0·60, 0·40, 0·25, 0·16, and 0·11 eV from the conduction band, with concentrations independent of the free carrier concentration with the exception of the 0·40 eV trap concentration, which increases slightly with free carrier concentration. © 1996 The Institute of Materials.
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
accesoRestringido.pdf15,38 kBAdobe PDFThumbnail
Show full item record
Review this work

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.