English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/52130
Title: A mathematical model for epitaxial growth on nonplanar substrates
Authors: Domínguez, P. S.; Briones Fernández-Pola, Fernando
Issue Date: 1995
Publisher: Elsevier
Citation: MICROELECTRONICS JOURNAL 26: 751-757 (1995)
Abstract: A new mathematical model devised to simulate growth on patterned substrates is described. Its aim is not to predict the evolution of the shape of any substrate during epitaxy, but to determine the value of the different kinetic parameters involved in the growth (mean lifetime before incorporation or desorption, surface diffusion length and diffusion coefficient of group III adatoms on the various crystalline facets), just by fitting the output of the program to the experimental epitaxial growth results. A simulation of GaAs MBE growth on a patterned substrate is included as an illustration of its operation. © 1995.
URI: http://hdl.handle.net/10261/52130
DOI: 10.1016/0026-2692(95)00033-X
Identifiers: doi: 10.1016/0026-2692(95)00033-X
issn: 0026-2692
Appears in Collections:(IMM-CNM) Artículos
Files in This Item:
File Description SizeFormat 
accesoRestringido.pdf15,38 kBAdobe PDFThumbnail
Show full item record

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.